To make the highly doped layer for Ohmic contact without using the ion implantation, the phosphorus doping by the epitaxial growth using phosphine (PH3) was conducted. The crystal face and C/Si ratio dependence of phosphorus doping were investigated. The highest doping concentration was obtained on off-axis (000-1) face and the lowest on off-axis (0001) face. The doping level of (11–20) face was located between that of off-axis (0001) and (000-1) faces. As the C/Si ratio was increased from 0.5 to 2.5, the doping concentration increased on (11–20) and off-axis (000-1) faces. The results on off-axis (0001) face showed the unclear C/Si ratio dependence. On (000-1) face, the phosphorus doping of 2 × 1018 cm−3 was obtained by increasing PH3 flow rate. The roughness, growth rate, and surface morphology of the high phosphorus doped epilayer were investigated.
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Tawara, T., Ueki, Y., Nakamura, S. et al. Crystal face and C/Si ratio Dependence of Phosphorus Doping by SiC Epitaxial Growth. MRS Online Proceedings Library 911, 526 (2005). https://doi.org/10.1557/PROC-0911-B05-26