Abstract
To make the highly doped layer for Ohmic contact without using the ion implantation, the phosphorus doping by the epitaxial growth using phosphine (PH3) was conducted. The crystal face and C/Si ratio dependence of phosphorus doping were investigated. The highest doping concentration was obtained on off-axis (000-1) face and the lowest on off-axis (0001) face. The doping level of (11–20) face was located between that of off-axis (0001) and (000-1) faces. As the C/Si ratio was increased from 0.5 to 2.5, the doping concentration increased on (11–20) and off-axis (000-1) faces. The results on off-axis (0001) face showed the unclear C/Si ratio dependence. On (000-1) face, the phosphorus doping of 2 × 1018 cm−3 was obtained by increasing PH3 flow rate. The roughness, growth rate, and surface morphology of the high phosphorus doped epilayer were investigated.
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Tawara, T., Ueki, Y., Nakamura, S. et al. Crystal face and C/Si ratio Dependence of Phosphorus Doping by SiC Epitaxial Growth. MRS Online Proceedings Library 911, 526 (2005). https://doi.org/10.1557/PROC-0911-B05-26
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DOI: https://doi.org/10.1557/PROC-0911-B05-26