High-Resolution X-ray Topography of Dislocations in 4H-SiC Epilayers


Synchrotron X-ray topography with high-resolution setup using 11–28 reflection was carried out on 4H-SiC epilayers. Four different shapes of threading edge dislocation (TED) images depending upon their Burgers vectors direction were observed. The four types of TED images were previously calculated by the computer simulation, and the experimental results correlated well with the simulation results. The detailed topographic features generated by plural screw dislocations and basal plane dislocations were also investigated.

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Kamata, I., Tsuchida, H., Vetter, W.M. et al. High-Resolution X-ray Topography of Dislocations in 4H-SiC Epilayers. MRS Online Proceedings Library 911, 511 (2005). https://doi.org/10.1557/PROC-0911-B05-11

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