High-Resolution X-ray Topography of Dislocations in 4H-SiC Epilayers

Abstract

Synchrotron X-ray topography with high-resolution setup using 11–28 reflection was carried out on 4H-SiC epilayers. Four different shapes of threading edge dislocation (TED) images depending upon their Burgers vectors direction were observed. The four types of TED images were previously calculated by the computer simulation, and the experimental results correlated well with the simulation results. The detailed topographic features generated by plural screw dislocations and basal plane dislocations were also investigated.

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References

  1. 1

    Y. Sugawara: ISPSD2003 (2003) 10

  2. 2

    P. G. Neudeck and J. A. Powell: IEEE Electron Device Lett. 15 (1994) 63.

    CAS  Article  Google Scholar 

  3. 3

    J. P. Bergman, H. Lendenmann, P.A. Nilsson U. Lindefelt, and P. Skytt: Mater. Sci. Forum 353-356, (2001) 299

    Article  Google Scholar 

  4. 4

    J. R. Jenny, D. P. Malta, M. R. Calus, St. G. Muller, A. R. Powell, V. F. Tsvetkov, H. McD. Hobgood, R. C. Glass and C. H. Carter, Jr: Matter. Sci. Forum 457 (2004) 35.

    Article  Google Scholar 

  5. 5

    I. Kamata, H. Tsuchida, T. Jikimoto and K. Izumi: Jpn. J. Appl. Phys., 39 (2000) pp. 6496–6500

    CAS  Article  Google Scholar 

  6. 6

    D. Nakamura, I. Gunjishima, S. Yamaguchi, T. Ito, A. Okamoto, H. Kondo, S. Onda and K. Takatori: Nature, 430 (2004) 1009.

    CAS  Article  Google Scholar 

  7. 7

    T. Ohno, H. Yamaguchi, S. Kuroda, K. Kojima, T. Suzuki, K. Arai: J. cryst. Growth. Vol. 260 (2004), p. 209.

    CAS  Article  Google Scholar 

  8. 8

    W. Vetter, H. Tsuchida, I. Kamata and M. Dudley: J. Appl. Cryst. Vol. 38 (2005), p. 442

    CAS  Article  Google Scholar 

  9. 9

    H. Tsuchida, I. Kamata, T. Jikimoto, and K. Izumi: J. Cryst. Growth Vol. 237-239 (2002), p. 1206

    Article  Google Scholar 

  10. 10

    M. Dudley, X. R. Huang, W. Huang, A. Powell, S. Wang, P. Neudeck and M. Skowronski: Appl. Phy. Lett. 75 (1999) 784

    CAS  Article  Google Scholar 

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Kamata, I., Tsuchida, H., Vetter, W.M. et al. High-Resolution X-ray Topography of Dislocations in 4H-SiC Epilayers. MRS Online Proceedings Library 911, 511 (2005). https://doi.org/10.1557/PROC-0911-B05-11

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