We report on the growth and properties of p-channel nanocrystalline Si thin film transistor (TFT) devices. In contrast to previous work, the devices are fabricated in n-body nanocrystalline Si. The doping of the n-body is systematically changed by doping with ppm levels of phosphorous. The threshold voltage was found to change systematically as phosphorus content increased. The TFT devices are of the bottom-gate type, grown on oxidized Si wafers. Source and drain contacts were provided by using either plasma grown p type nanocrystalline layers, or by the simple process of Al diffusion. A top layer of plasma-deposited silicon dioxide was found to decrease the off current significantly. High on-off current ratios exceeding 106 were obtained. Hole mobilities in the devices were consistently good, with the best mobility being in the range of ~1.3 cm2/V-s.
This is a preview of subscription content, access via your institution.
Buy single article
Instant access to the full article PDF.
Tax calculation will be finalised during checkout.
S. Martin, C-H Chiang, J-Y Nahm, T. Li, J. Kanicki and Y. Ugai: Jpn. J. Appl. Phys. 40 (2001) pp. 530–537.
A. Sazonov, D. Striakhilev, C-H Lee, and A. Nathan: Proceedings of the IEEE,. 93, No. 8, (2005).
C-H. Lee, A. Sazonov, and A Nathan: Applied Phys. Lett. 86, 222106 (2005).
I-C Chen and S. Wagner: IEE Proc.- Circuits, Devices Syst., Vol. 150, No. 4, 2003.
L. Teng, and W.A. Anderson: IEEE Electron Device Lett., 24, No.6, 2003.
M. Wu and S. Wagner, J. Non-Cryst. Solids, 299–302,1316(2002)
V. L. Dalal, J. Graves and J. Leib, Appl. Phys. Lett., 85, 1413(2004)
V. L. Dalal and Puneet Sharma , Appl. Phys. Let. 86, 103510 (2005)
About this article
Cite this article
Panda, D.P., Noack, M. & Dalal, V. P Channel Mosfet Devices in Nanocrystalline Silicon. MRS Online Proceedings Library 910, 2207 (2005). https://doi.org/10.1557/PROC-0910-A22-07