Abstract
Self-aligned p-channel thin film transistors (TFTs) were fabricated with an ultra low temperature polycrystalline silicon (poly-Si) process on benzocyclobutene planarized stainless steel foil substrates (SSFs). We have demonstrated a successful crystallization of large grain poly-Si films with sequential lateral solidification (SLS) method. The TFT performances were enhanced and stabilized by plasma oxidation of the polycrystalline Si surface prior to Al2O3 gate dielectric film, which was deposited by a plasma enhanced atomic layer deposition (PEALD) method. The fabricated TFT showed a field effect mobility of 95cm2/Vs, a threshold voltage of - 3V and a sub-threshold swing of 0.45 V/dec..
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Moon, J., Park, DJ., Chung, CH. et al. Self-aligned Thin Film Transistor Fabrication with an Ultra Low Temperature Polycrystalline Silicon Process on a Benzocyclobutene Planarized Stainless Steel Foil Substrate. MRS Online Proceedings Library 910, 1803 (2005). https://doi.org/10.1557/PROC-0910-A18-03
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DOI: https://doi.org/10.1557/PROC-0910-A18-03