Self-aligned Thin Film Transistor Fabrication with an Ultra Low Temperature Polycrystalline Silicon Process on a Benzocyclobutene Planarized Stainless Steel Foil Substrate

Abstract

Self-aligned p-channel thin film transistors (TFTs) were fabricated with an ultra low temperature polycrystalline silicon (poly-Si) process on benzocyclobutene planarized stainless steel foil substrates (SSFs). We have demonstrated a successful crystallization of large grain poly-Si films with sequential lateral solidification (SLS) method. The TFT performances were enhanced and stabilized by plasma oxidation of the polycrystalline Si surface prior to Al2O3 gate dielectric film, which was deposited by a plasma enhanced atomic layer deposition (PEALD) method. The fabricated TFT showed a field effect mobility of 95cm2/Vs, a threshold voltage of - 3V and a sub-threshold swing of 0.45 V/dec..

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References

  1. 1

    T. Afentakis, M. Hatalis, A. Voutsas, and J. Hartzell, Proc. Mat. Res. Soc. Symp., 769, H.2.5.1, (2003).

    Article  Google Scholar 

  2. 2

    M. Wu, X. Bo, J. Strum, and S. Wagner, IEEE Trans. Electron Devices, 49, 1993, (2002).

    CAS  Article  Google Scholar 

  3. 3

    T. Serikawa and F. Omata, IEEE Trans. Electron Devices, 20, 574,(1999).

    CAS  Article  Google Scholar 

  4. 4

    Martin, J. Godshlax, M. Mills, E. Shaffer II, and P. Townsend, Adv. Mater., 12, 1769, (2000).

    Article  Google Scholar 

  5. 5

    Available at www.dow.com/cyclotene/

  6. 6

    Y. H. Kim, C. Y. Sohn, J. W. Lim, S. J. Yun, C. S. Hwang, C. H. Chung, Y. W. Ko, and J. H. Lee, IEEE Electron Device Lett., 25, 550,(2004).

    CAS  Article  Google Scholar 

  7. 7

    S. J. Yun, J. W. Lim, and J. H. Lee, Electrochem. Solid-state Lett., 7, C13, (2004).

    CAS  Article  Google Scholar 

  8. 8

    S. P. Timoshenko, and J. N. Gordiner, Theory of Elasticity, (McGraw-Hill, 1970).

    Google Scholar 

  9. 9

    D.A. Porter, and K.E. Easterling, Phase Transformations in Metals and Alloys, (Chapman & Hall, 1992), Chapter 4.

    Google Scholar 

  10. 10

    Y. H. Kim, C. H. Chung, S. J. Yun, J. Moon, D. J. Park, D. W. Kim, J. W. Lim, Y. H. Song, and Jin Ho Lee, Thin Solid Films, 192, 493 (2005).

    Google Scholar 

  11. 11

    S. C. Ha, E. Choi, S. H. Kim, and J. S. Roh, Thin Solid Film, 476, 252 (2005).

    CAS  Article  Google Scholar 

  12. 12

    M. Goto, K. Azuma, T. Okamoto, and Y. Nakata, Jpn. J. Appl. Phys., 42, 7033, (2003).

    CAS  Article  Google Scholar 

  13. 13

    Y.H. Kim, J. Moon, C.H. Chung, S.J. Yun, D.J.Park, J.W. Lim, Y.H. Song, and J.H.Lee, IEEE Electron Device Lett., (submitted).

  14. 14

    F. Tempelier, B. Aventurier, M. Moreau, A. Mortillaro, R. Tempelier, and A. Passero, Euro Display, 2005 , 414 (2005).

    Google Scholar 

  15. 15

    H.S. Shin, J.B. Koo, J.K. Jeong, Y.G. Mo, H. K. Chung, J. H. Cheon, J. H. Choi, K. M. Kim, J. H. Hur, S. H. Park, S. K. Kim, and J. Jang, SID Digest , 2005, 1642 (2005).

    Article  Google Scholar 

  16. 16

    M. J. Lee, C. P. Judge, S. W. Wright, Solid State Electron., 44, 1431,(2000).

    CAS  Article  Google Scholar 

  17. 17

    F. Lemmi, W. Chung, S. Lin, P. M. Smith, T. Sasagawa, B. C. Drews, A. Hua, J. R. Stern, and J. Y. Chen, IEEE Electron Device Lett., 25,486, (2004).

    CAS  Article  Google Scholar 

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Moon, J., Park, DJ., Chung, CH. et al. Self-aligned Thin Film Transistor Fabrication with an Ultra Low Temperature Polycrystalline Silicon Process on a Benzocyclobutene Planarized Stainless Steel Foil Substrate. MRS Online Proceedings Library 910, 1803 (2005). https://doi.org/10.1557/PROC-0910-A18-03

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