Fabrication of hot-wire chemical vapor deposition (HWCVD) of amorphous silicon (a-Si) thin film transistors (TFT) on thin polyimide sheets is reported. A single graphite filament at 1500 °C was used for HWCVD and device quality amorphous silicon films were deposited with no thermal damage to plastic substrate. Top-gate staggered thin film transistors (TFTs) were fabricated at 150°C using hot-wire deposited a-Si channel, plasma enhanced chemical vapor deposition (PECVD) silicon nitride gate dielectric, and microcrystalline n+ drain/source contacts. Low leakage current of 5×10-13 A, high switching current ratio of 1.3×107, and small sub threshold swing of 0.3 V/dec was obtained for TFTs with aspect ratio of 1300µm/100µm. The field effect mobility was extracted to be 0.34 cm2/V.s.
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C. McArthur, M. Meitine, and A. Sazonov, “Optimization of 75°C Amorphous Silicon Nitride for TFTs on Plastics,” in Flexible Electronic — Materials and Device Technology, N. Fruehauf, B.R. Chalamala, B.E. Gnade, J. Jang, eds., Mat.Res.Soc.Symp.Proc, Pittsburgh, PA, vol.769, pp. 303–308, (2003)
B. Stannowski, R.E.I. Schropp, R.B. Wehrspohn, and M.J. Powell, “Amorphous silicon Thin Film Transistors deposited by VHG-PECVD and Hot-Wire CVD”, J. Non-Cryst. Solids 299–302, (2002)
A.A. Langford, M.L. Fleet, B.P. Nelson, W.A. Langford, and N. Maley, “Infrared Absorption Strength and Hydrogen Content of Hydrogenated Amorphous Silicon”, Phys Rev B Condense Matter., vol. 45, no. 23, pp. 13367–13377, (1992)
K.S. Karim, A.Nathan, M.Hack, W.I. Milne, “Drain-Bias dependence of threshold voltage stability of amorphous silicon TFTs”, IEEE Electron Device Lett., 25(4), pp188–190, (2004)
F. Taghibakhsh, K.S. Karim, A. Madan, “Low leakage a-Si:H Thin Film Transistors deposited on Glass Substrates using Hot Wire Chemical Vapor Deposition,” Journal of Vacuum Science and Technology, in press.
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Taghibakhsh, F., Karim, K.S. Hot-wire CVD a-Si:H TFT on Plastic Substrates. MRS Online Proceedings Library 910, 1802 (2005). https://doi.org/10.1557/PROC-0910-A18-02