Hot-wire CVD a-Si:H TFT on Plastic Substrates

Abstract

Fabrication of hot-wire chemical vapor deposition (HWCVD) of amorphous silicon (a-Si) thin film transistors (TFT) on thin polyimide sheets is reported. A single graphite filament at 1500 °C was used for HWCVD and device quality amorphous silicon films were deposited with no thermal damage to plastic substrate. Top-gate staggered thin film transistors (TFTs) were fabricated at 150°C using hot-wire deposited a-Si channel, plasma enhanced chemical vapor deposition (PECVD) silicon nitride gate dielectric, and microcrystalline n+ drain/source contacts. Low leakage current of 5×10-13 A, high switching current ratio of 1.3×107, and small sub threshold swing of 0.3 V/dec was obtained for TFTs with aspect ratio of 1300µm/100µm. The field effect mobility was extracted to be 0.34 cm2/V.s.

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Taghibakhsh, F., Karim, K.S. Hot-wire CVD a-Si:H TFT on Plastic Substrates. MRS Online Proceedings Library 910, 1802 (2005). https://doi.org/10.1557/PROC-0910-A18-02

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