The Crystallization Mechanism of Poly-Si Thin Film Using High-power Nd:YAG Laser with Gaussian Beam Profile


This paper studies the poly-Si crystallization mechanism under the high power (200 W) Nd:YAG solid state pulsed laser annealing system. It is found that the Gaussian-distributed laser beam profile successfully produce large super lateral growth process window. The devices in the SLG process window exhibit an electron field-effect mobility around 250 cm2/V.s and a threshold voltage lower than 1 V. The influence of a-Si film thickness and the laser scan pitch on the process window is also carefully investigated.

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Zan, H.W., Huang, C.Y., Saito, K. et al. The Crystallization Mechanism of Poly-Si Thin Film Using High-power Nd:YAG Laser with Gaussian Beam Profile. MRS Online Proceedings Library 910, 1403 (2005).

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