The Crystallization Mechanism of Poly-Si Thin Film Using High-power Nd:YAG Laser with Gaussian Beam Profile

Abstract

This paper studies the poly-Si crystallization mechanism under the high power (200 W) Nd:YAG solid state pulsed laser annealing system. It is found that the Gaussian-distributed laser beam profile successfully produce large super lateral growth process window. The devices in the SLG process window exhibit an electron field-effect mobility around 250 cm2/V.s and a threshold voltage lower than 1 V. The influence of a-Si film thickness and the laser scan pitch on the process window is also carefully investigated.

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References

  1. 1

    T. Serikawa, S. Shirai, A. Okamoto, and S. Suyama, IEEE Trans. Electron Devices 36, 1929 (1989).

    CAS  Article  Google Scholar 

  2. 2

    J. S. Im, H. J. Kim, and M. O. Thompson, Appl. Phys. Lett. 63, 1969 (1993).

    CAS  Article  Google Scholar 

  3. 3

    S. D. Brotherton, D. J. McCulloch, J. P. Gowers, J. R. Ayres, and M. J. Trainor, J. Appl. Phys. 82, 4086 (1997).

    CAS  Article  Google Scholar 

  4. 4

    N. Matsuo, Y. Aya, T. Karamori, T. Nouda, H. Hamada and T. Miyoshi, Jpn. J. Appl. Phys. 39, 351 (2000).

    CAS  Article  Google Scholar 

  5. 5

    A. Hara, M. Takei, K. Yoshino, F. Takeuchi and N. sasaki, Jpn. J. Appl. Phys. 43, L790 (2004).

    CAS  Article  Google Scholar 

  6. 6

    K. Kitahara, Y. Ohashi, Y. Katoh, A. Hara and N. Sasaki, J. Appl. Phys. 95, 7850 (2004).

    CAS  Article  Google Scholar 

  7. 7

    A. Hara, M. Takei, F. Tajeuchi, K. Suga, K. Yoshino, M. Chida, T. Kakehi, Y. Ebiko, Y. Sano and N. Sasaki, Jpn. J. Appl. Phys. 43,1269 (2004).

    CAS  Article  Google Scholar 

  8. 8

    K. Kitahara, A. Moritani, A. Hara and M. Okabe, Jpn. J. Appl. Phys. 38, L1312 (1999).

    CAS  Article  Google Scholar 

  9. 9

    K. Kitahara, R. Yamazaki, T. Kurosawa, K. Nakajima and A. Moritani, Jpn. J. Appl. Phys. 41, 5055 (2002).

    CAS  Article  Google Scholar 

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Zan, H.W., Huang, C.Y., Saito, K. et al. The Crystallization Mechanism of Poly-Si Thin Film Using High-power Nd:YAG Laser with Gaussian Beam Profile. MRS Online Proceedings Library 910, 1403 (2005). https://doi.org/10.1557/PROC-0910-A14-03

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