The Crystallization Mechanism of Poly-Si Thin Film Using High-power Nd:YAG Laser with Gaussian Beam Profile

MRS Online Proceedings Library volume 910, Article number: 1403 (2005) Cite this article

Abstract

This paper studies the poly-Si crystallization mechanism under the high power (200 W) Nd:YAG solid state pulsed laser annealing system. It is found that the Gaussian-distributed laser beam profile successfully produce large super lateral growth process window. The devices in the SLG process window exhibit an electron field-effect mobility around 250 cm2/V.s and a threshold voltage lower than 1 V. The influence of a-Si film thickness and the laser scan pitch on the process window is also carefully investigated.

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Affiliations

  1. Department of Photonics, NCTU, Display Institute, National Chiao Tung University, HsinChu, 1001 Ta Hsueh Rd. MIRC Building 513R, 300, Taiwan

    Hsiao Wen Zan & Chang Yu Huang

  2. Chiba Institute for Super Materials, Chiba, ULVAC, Japan

    Kazuya Saito

  3. ULVAC Chigasaki, Kanagawa, Japan

    Kouichi Tamagawa

  4. ULVAC Taiwan, HsinChu, 300, Taiwan

    Jack Chen & Tung Jung Wu

Authors
  1. Hsiao Wen Zan
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  2. Chang Yu Huang
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  3. Kazuya Saito
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  4. Kouichi Tamagawa
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  5. Jack Chen
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  6. Tung Jung Wu
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Zan, H.W., Huang, C.Y., Saito, K. et al. The Crystallization Mechanism of Poly-Si Thin Film Using High-power Nd:YAG Laser with Gaussian Beam Profile. MRS Online Proceedings Library 910, 1403 (2005). https://doi.org/10.1557/PROC-0910-A14-03

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