Microcrystalline silicon-germanium films (µ c-SiGe) were fabricated on Corning #7059 glass substrates by the RF reactive magnetron sputtering method. The µc-SiGe films with Ge fraction of 0.7–0.8 could be crystallized at 200 °C by H2 introduction into the sputtering gases. The absorption coefficients of the films decrease in long wavelength region corresponding to the photon energies below the energy gap and become close to those of single crystal Si0.25Ge0.75 by the decrease in the substrate temperature. The dark conductivities show lower values of 10-7 S/cm at 200 °C and 300 °C with H2 introduction. Besides, the photosensitivity is observed in these samples. These results indicate that the H2 introduction into the sputtering gases has two important effects to decrease the crystallization temperature of the µc-SiGe films and to improve the film properties by reducing the dangling bond defects.
This is a preview of subscription content, access via your institution.
Buy single article
Instant access to the full article PDF.
Tax calculation will be finalised during checkout.
K. Yamamoto, T. Suzuki, M. Yoshimi and A. Nakajima, Proc. of the 25th IEEE PV Spec. Conf., 1428 (1996).
J. Meier, R. Fluckiger, H. Keppner and A. Shah, Appl. Phys. Lett., 65, 860 (1994).
M. Isomura, K. Nakahata, M. Shima, S. Taira, K. Wakisaka, M. Tanaka and S. Kiyama, Sol. Energy Mater. & Sol. Cells, 74, 519 (2002).
K. Ogata, A. Niwa, T. Matsui, M. Isomura and M. Kondo, Technical Digest of the 15th PVSEC, 768 (2005).
I. Nakamura, A. Toru, H. Abe, D. Hoshi and M. Isomura, VACUUM, (2006) (in press).
Y. Hishikawa, N. Nakamura, S. Tsuda, S. Nakano, Y. Kishi and Y. Kuwano, Jpn. J. Appl. Phys, 30, 1008 (1991).
C K Maiti, G A Armstrong, APPLICATION OF SILICON-GERMANIUM HETEROSTRUCTURE DEVICE, (Institute of Physical Publishing, 2001), p. 321.
About this article
Cite this article
Nakamura, I., Ajiki, T. & Isomura, M. Low Temperature Fabrication of Microcrystalline Silicon Germanium Films by RF Reactive Magnetron Sputtering. MRS Online Proceedings Library 910, 1305 (2005). https://doi.org/10.1557/PROC-0910-A13-05