Role of Surface on the Persistent Photoconductivity in Porous Silicon and Boron Doped a-Si:H

Abstract

The effect of ambient conditions on light soaking (LS) in porous silicon (PS) is studied. In vacuum, LS on porous silicon increases dark current (DC) while in presence of water vapor it decreases DC. Interestingly, LS gives a higher DC in vacuum as well as in presence of water vapor for boron doped hydrogenated amorphous silicon a-Si:H(B) samples. A thin layer of polystyrene polymer almost eliminates the light induced degradation of porous silicon (PS) layers but can do so only to a smaller extent in a-Si:H(B). This shows that the effect of LS in PS is different than the effect of LS in a-Si:H(B) and that the surface plays a more important role in PS than in a-Si:H.

This is a preview of subscription content, access via your institution.

References

  1. 1

    L. T. Canham, Appl. Phys. Lett. 57, 10461048 (1990).

    CAS  Article  Google Scholar 

  2. 2

    O. Bisi, S. Ossicini and L. Pavesi, Surf. Sci. Reports. 38, 1 (2000).

    CAS  Article  Google Scholar 

  3. 3

    N. P. Mandal and S. C. Agarwal, J. Mater. Sci.: Mater. Elctr. 14, 797798 (2003).

    CAS  Google Scholar 

  4. 4

    N. P. Mandal and S. C. Agarwal, Mater. Res. Soc. Symp. Proc. Vol 762, A17.18, Editors: J. R. Abelson, G. Ganguly, H. Matsumura, J. Robertson, E. A. Schiff, Spring 2003, San Francisco.

    Google Scholar 

  5. 5

    S. T. Lakshmikumar and P. K. Singh, J. Appl. Phys . 6, 3413 (2002).

    Article  Google Scholar 

  6. 6

    See for review, H. Fritzsche, Annual Review of Material Science 31, 47 (2001).

    CAS  Article  Google Scholar 

  7. 7

    C. Anandan, C. Mukherjee, T. Seth, P. N. Dixit and R. Bhattacharya, Appl. Phys. Lett. 68, 835 (1996).

    Article  Google Scholar 

  8. 8

    W. H. Lee, H. Lee and C. Lee, J. Non-Crys. Solids, 164–166, 965 (1993).

    Article  Google Scholar 

  9. 9

    T. Frello, E. Veje and O. Leistiko, J. Appl. Phys., 79, 1027 (1996).

    CAS  Article  Google Scholar 

  10. 10

    N P Mandal, Abhishek Kumar and S C Agarwal (accepted in J. Non-Cryst. Solids).

  11. 11

    B. Aker and H. Fritzsche, J. Appl. Phys. 54, 6626 (1983).

    Article  Google Scholar 

  12. 12

    N P Mandal, Ashutosh Sharma and S C Agarwal (accepted in J. Appl. Phys.)

  13. 13

    N P Mandal, Ashutosh Sharma and S C Agarwal, Solid State Commun. 129, 183186 (2004).

    CAS  Article  Google Scholar 

Download references

Author information

Affiliations

Authors

Rights and permissions

Reprints and Permissions

About this article

Cite this article

Agarwal, S.C., Kumar, A. & Mandal, N.P. Role of Surface on the Persistent Photoconductivity in Porous Silicon and Boron Doped a-Si:H. MRS Online Proceedings Library 910, 1201 (2005). https://doi.org/10.1557/PROC-0910-A12-01

Download citation