Effects of HWCVD-deposited Seed Layers on Hydrogenated Microcrystalline Silicon Films on Glass Substrates

MRS Online Proceedings Library volume 910, Article number: 805 (2005) Cite this article

Abstract

Microcrystalline silicon (µc-Si:H) was deposited by hot-wire chemical vapor deposition (HWCVD) using a graphite filament on glass substrates with and without a thin 50 nm µc-Si:H seed layer. Increasing silane concentration diluted in H2 led to a decrease in crystalline fraction as well in a decrease in dark conductivity and photo-conductivity. In addition, films deposited with a seed layer were found to have higher dark conductivity and photo-conductivity than those without a seed layer but deposited at slower growth rates. However, Raman spectroscopy showed that use of a seed layer resulted in only a small increase in crystalline fraction at the surface of the films which had thicknesses between 250-400nm. TEM measurements confirmed the crystalline nature of deposited films showing average grain sizes of 25 nm.

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Affiliations

  1. School of Engineering Science, Simon Fraser University, BC, 8888 University Drive, V5A 1S6, Burnaby, Canada

    Michael Musashi Adachi, Wing Fai Lydia Tse & Karim S. Karim

  2. Department of Physics, Simon Fraser University, BC, 8888 University Drive, V5A 1S6, Burnaby, Canada

    Garnet Cluff & Karen L. Kavanagh

Authors
  1. Michael Musashi Adachi
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  2. Wing Fai Lydia Tse
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  3. Garnet Cluff
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  4. Karen L. Kavanagh
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  5. Karim S. Karim
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Adachi, M.M., Tse, W., Cluff, G. et al. Effects of HWCVD-deposited Seed Layers on Hydrogenated Microcrystalline Silicon Films on Glass Substrates. MRS Online Proceedings Library 910, 805 (2005). https://doi.org/10.1557/PROC-0910-A08-05

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