Microcrystalline silicon (µc-Si:H) was deposited by hot-wire chemical vapor deposition (HWCVD) using a graphite filament on glass substrates with and without a thin 50 nm µc-Si:H seed layer. Increasing silane concentration diluted in H2 led to a decrease in crystalline fraction as well in a decrease in dark conductivity and photo-conductivity. In addition, films deposited with a seed layer were found to have higher dark conductivity and photo-conductivity than those without a seed layer but deposited at slower growth rates. However, Raman spectroscopy showed that use of a seed layer resulted in only a small increase in crystalline fraction at the surface of the films which had thicknesses between 250-400nm. TEM measurements confirmed the crystalline nature of deposited films showing average grain sizes of 25 nm.
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Adachi, M.M., Tse, W., Cluff, G. et al. Effects of HWCVD-deposited Seed Layers on Hydrogenated Microcrystalline Silicon Films on Glass Substrates. MRS Online Proceedings Library 910, 805 (2005). https://doi.org/10.1557/PROC-0910-A08-05