The Influence of the Hot Wire Temperature on the Crystallization of μc-Si:H Films Prepared by Hot Wire-Assisted-ECR-CVD


We have constructed a hot-wire-assisted ECR-CVD system to prepare a-Si:H and µc-Si:H films. The effect of hot wire (HW) temperature on crystallization of a-Si:H films is studied in the films prepared by this system. At low HW temperature, about 20 at.% hydrogen is included in the film. With increasing the HW temperature, the contents of the total hydrogen, SiH2 and SiH decrease, and the microcrystalline phase appears. It is found from the area of the TO peak of the Raman scattering spectra that the volume fraction of the crystalline phase increases with increasing the HW temperature. The crystalline peak has a tendency to shift toward the higher wavenumber with increasing the HW temperature, suggesting that the grain size increases with increasing the HW temperature.

This is a preview of subscription content, access via your institution.


  1. 1

    M. Medudre, R. Meaudre, R. Butté and S. Vignoli, J. Appl. Phys. 86, 946 (1999).

    Article  Google Scholar 

  2. 2

    P. Roca I Cabarrocas, A. Fontcuberta i Morral and Y. Poissant, Thin Solid Films 39, 403 (2002).

    Google Scholar 

  3. 3

    P. M. Voylesa, J. Appl. Phys. 90, 4437 (2001).

    Article  Google Scholar 

  4. 4

    J. M. Pearce, R. J. Koval, A. S. Ferlauto, R. W. Collins and C. R. Wronski, Appl. Phys. Lett. 77, 3093 (2000).

    CAS  Article  Google Scholar 

  5. 5

    C. Das and S. Ray, Thin Solid Films 81, 403 (2002).

    Google Scholar 

  6. 6

    S. Sheng, X. Liao and G. Kong, Appl. Phys. Lett. 73, 336 (1998).

    CAS  Article  Google Scholar 

  7. 7

    S. Ferrero, P. Mandracci, G. Cicero, F. Giorgis, C.F. Pirri and G. Barucca, Thin Solid Films 383, 181 (2001).

    CAS  Article  Google Scholar 

  8. 8

    S. R. Jadkar, J.V. Sali, S.T. Kshrisagar and M. G. Takwale, Thin Solid Films 437, 18 (2003).

    CAS  Article  Google Scholar 

  9. 9

    J. Zi, H. Büscher, C. Falter, W. Ludwig, K. Zhang and X. Xie, Appl. Phys. Lett. 69 (2), 8 (1996).

    Article  Google Scholar 

  10. 10

    M. Vanacek, J. Kocka, J. Strichlik, Z. Kosicek, O. Stika and A. Triska, Sol. Energy Mater. 8, 411 (1983).

    Article  Google Scholar 

  11. 11

    Akihisa Matsuda, Jpn. J. Appl. Phys. 43, 7909 (2004).

    CAS  Article  Google Scholar 

  12. 12

    J. Doyle, R. Robertson, G. H. Lin, M. Z. He and A. Gallagher, J. Appl. Phys 64, 3215 (1988).

    CAS  Article  Google Scholar 

Download references

Author information



Rights and permissions

Reprints and Permissions

About this article

Cite this article

Li, Y., Li, Z.z., Chen, G.h. et al. The Influence of the Hot Wire Temperature on the Crystallization of μc-Si:H Films Prepared by Hot Wire-Assisted-ECR-CVD. MRS Online Proceedings Library 910, 804 (2005).

Download citation