Thin Films of GeC Deposited Using a Unique Hollow Cathode Sputtering Technique

Abstract

Experimental results on thin films of the new material GexC1-x, deposited by a unique dual plasma hollow cathode sputtering technique are presented here. The (Ge, C) system is extremely promising since the addition of C to Ge has reduced the lattice dimensions enough to allow a lattice match to silicon, while increasing the bandgap close to that of c-Si. The sputtering is accomplished by igniting a dc plasma of the Ar and H2 gases which are fed through Ge and C nozzles, cylindrical tubes 30 mm in length with an outside diameter of 8 mm and an inside diameter of 3 mm.

The basic material, optical, and structural properties were analyzed. Film characterization was performed using Fourier transform infra-red spectroscopy (FTIR), X-ray diffraction (XRD), and spectroscopic ellipsometry. The film properties from a variety of deposition conditions are discussed. The measurements made indicate that the films can be grown so that the C enters the material at lattice sites. In addition, the GexC1-x films absorb photons much more efficiently than either c-Si or c-Ge.

Initial results on films which include Al as an added impurity are presented.

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References

  1. 1

    R. J. Soukup, N. J. Ianno, J. S. Schrader and V. L. Dalal, Mat. Res. Soc. Symp. Proc. 862 (2005), pp. A20.2.1A20.2.6.

    Article  Google Scholar 

  2. 2

    J. S. Schrader. J. L. Huguenin-Love, R. J. Soukup, N. J. Ianno, C. L. Exstrom, S. A. Darveau, R. N. Udey, V. L. Dalal, “Thin Films of GeC Deposited Using a Unique Hollow Cathode Sputtering Technique”, accepted Solar Energy Materials and Solar Cells.

  3. 3

    L. Hoffmann, J. C. Bach, B. Bech Nielsen, P. Leary, R. Jones and S. Öberg, Phys. Rev. B 55,11 (1997).

    Article  Google Scholar 

  4. 4

    A. J. Dekker, Solid State Physics, Prentice Hall, Englewood Cliffs, NJ, 1962, p. 14.

    Google Scholar 

  5. 5

    W. Li, Ismat Shah, D. Guerin, J. G. Chen and H. Hwu, J. Vac. Sci. Technol. A19, 2617 (2001).

    CAS  Article  Google Scholar 

  6. 6

    J. Tauc, Amorphous and Liquid Semiconductors (Plenum Press, London and New York, 1974), pp 175–176.

    Google Scholar 

  7. 7

    R. J. Soukup, N. J. Ianno, G.Pribil and Z. Hubička, Surface and Coatings Technol., 177–178, 676–681 (2004).

    Article  Google Scholar 

  8. 8

    NREL Excel Spreadsheet, “Solar Spectra: Standard Air Mass Zero,” (2000), <http://rredc.nrel.gov/solar/spectra/am0/ASTM2000.html>.

  9. 9

    Roy F. Potter, in Handbook of Optical Constants of Solids edited by Edward D. Palik (Academic Press, San Diego, CA, 1998) p. 465.

    Google Scholar 

  10. 10

    David F. Edwards, ibid, p. 547.

  11. 11

    H. Piller, ibid, p. 571.

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Huguenin-Love, J.L., Soukup, R.J., Ianno, N.J. et al. Thin Films of GeC Deposited Using a Unique Hollow Cathode Sputtering Technique. MRS Online Proceedings Library 910, 703 (2005). https://doi.org/10.1557/PROC-0910-A07-03

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