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Redistribution of Mn upon Annealing in Ferromagnetic Mn-implanted Si

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Abstract

The redistribution of implanted Mn ions in Si after thermal annealing is studied. P-type Si wafers were implanted with 300-keV Mn+ ions at 350°C to a dose of 1×1015 cm-2, and then annealed at 800 °C for 5 min. Ferromagnetic hysteresis loops were obtained at 10 K using a SQUID magnetometer both before and after annealing. The saturation magnetization increases by ∼2 × after the post-implant annealing, while the Mn redistributes with sharp peaks in concentration. The calculated point-defect profile created during the implantation process peaks around the Mn-depleted region, suggesting that the residual implant damage may play a role in the ferromagnetic behavior of Mn-implanted Si.

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Authors and Affiliations

  1. College of Nanoscale Science & Engineering, University at Albany-SUNY, Albany, New York, 12203, USA

    M. Bolduc, C. Awo-Affouda, F. Ramos & V. P. LaBella

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  1. M. Bolduc
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  2. C. Awo-Affouda
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  3. F. Ramos
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  4. V. P. LaBella
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Bolduc, M., Awo-Affouda, C., Ramos, F. et al. Redistribution of Mn upon Annealing in Ferromagnetic Mn-implanted Si. MRS Online Proceedings Library 908, 1703 (2005). https://doi.org/10.1557/PROC-0908-OO17-03

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