SIMS Depth Profiling Free of Martix Effects

Abstract

We present a method of determining elemental depth profiles with secondary ion mass spectrometry (SIMS) corrected by all non-linearities between the SIMS countrate and the elemental concentration caused by chemical matrix effects, resulting in an absolute concentration depth profile. The key to this method is a low dose ion implantation step of corresponding reference isotopes prior to SIMS depth profiling. Spectra evaluation is performed on the basis of a selfconsistent evaluation in which the depth dependent influence of the matrix is determined. The technique is demonstrated for sequentially high dose ion implanted Cd and Se in SiO2.

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Correspondence to P. Huber.

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Huber, P., Karl, H. & Stritzker, B. SIMS Depth Profiling Free of Martix Effects. MRS Online Proceedings Library 908, 1202 (2005). https://doi.org/10.1557/PROC-0908-OO12-02

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