Positron Annihilation Investigation in Ion-implanted Yttria-stabilized Zirconia


Implantation with a variety of sub-MeV ions (He, Ar, Xe, O, and I) were performed on cubic single crystals of yttria-stabilized zirconia in order to assess the capability of such material to withstand high fluences as a confinement matrix for nuclear waste. In this work, we confronted the results of both Doppler Broadening using slow positron implantation spectroscopy (DB-SPIS) and the Rutherford Backscattering/Channeling spectroscopy (RBS-C) which are sensitive to lattice defects almost opposite in nature. In spite of their difference in defect specific sensitivity, and except for a precursory damage production stage almost exclusively exhibited by SPIS for very low doses (< 0.1 dpa), either techniques show a similar fluence dependence, which exhibits 3 stages starting respectively around 0.1, 2 and 3 dpa, regardless of the damaging ion. However, owing to the stage I plateau displayed in the variation of the DB-SPIS lineshape parameter, we were able to estimate an ion-mass dependence of the critical size of open-volume defects reached before the production of new predominant defects.

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Grynszpan, R.I., Brauer, G. & Anwand, W. Positron Annihilation Investigation in Ion-implanted Yttria-stabilized Zirconia. MRS Online Proceedings Library 908, 1001 (2005). https://doi.org/10.1557/PROC-0908-OO10-01

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  • zirconia
  • ion-irradiation
  • positrons
  • RBS-Channeling