A two-step growth technique was used to achieve effective strain relaxation and dislocation confinement of epitaxial SrTiO3(STO) films and through this to improve their microwave dielectric properties. The crystallization of a very thin quasi-amorphous STO layer deposited at a low temperature in the initial growth step enhanced the strain relaxation from the lattice mismatch at the expense of the formation of high density of misfit dislocations. By varying the thickness of the first layer, different strain states of the films were systematically achieved while keeping the total film thickness unchanged. This allowed the study of the effect of strain on permittivity, and showed good agreement with theoretical predictions. Further more, the two-step growth technique suppressed significantly the threading dislocation density in the film, the dislocations being confined to the first layer. This in turn caused reduction in the extrinsic dielectric loss at microwave frequency. The loss reduction was analyzed and explained based on a dielectric composite model.
This is a preview of subscription content, access via your institution.
Buy single article
Instant access to the full article PDF.
Tax calculation will be finalised during checkout.
O.G. Vendik, E.K. Hollman, A.B. Kozyrev, and A.M. Prudan, J. Supercond. 12, 325 (1999).
Q.X. Jia, A.T. Findikoglu, D. Reagor, and P .Lu, Appl. Phys. Lett. 73, 897 (1998).
T. Yamada, K.F. Astafiev, V.O. Sherman, A.K. Tagantsev, P. Muralt and N. Setter, Appl. Phys. Lett. 86, 142904 (2005).
T. Yamada, K.F. Astafiev, V.O. Sherman, A.K. Tagantsev, D. Su, P. Muralt and N. Setter, J. Appl. Phys. 98, 054105 (2005).
D. Su et al., unpublished (2005).
T. Suzuki, Y. Nishi, and M. Fujimoto, Philos. Mag. A 79, 2461 (1999).
N.A. Pertsev, A.K. Tagantsev, and N. Setter, Phys. Rev. B 61, R825 (2000).
A.K. Tagantsev, V.O. Sherman, K.F. Astafiev, J. Venkatesh, and N. Setter, J. Electroceramics 11, 5 (2003).
C.L. Canedy, H. Li, S.P. Alpay, L. Salamanca-Riba, A.L. Roytburd, and R. Ramesh, Appl. Phys. Lett. 77, 1695 (2000).
H. Li, A.L. Roytburd, S.P. Alpay, T.D. Tran, L. Salamanca-Riba, and R. Ramesh, Appl. Phys. Lett. 78, 2354 (2001).
K.F. Astafiev, V.O. Sherman, A.K. Tagantsev, N. Setter, T. Kaydanova, and D. Ginley, Appl. Phys. Lett. 84, 2385 (2004).
K.F. Astafiev, A.K. Tagantsev, and N. Setter, J. Appl. Phys. 97, 014106 (2005).
About this article
Cite this article
Yamada, T., Sherman, V.O., Tagantsev, A.K. et al. Strain Relaxation and Dislocation Confinement in Epitaxial SrTiO3 by Two-step Growth Technique and the Resulting Dielectric Response. MRS Online Proceedings Library 902, 1002 (2005). https://doi.org/10.1557/PROC-0902-T10-02