Bismuth titanate (Bi4Ti3O12) is an electroceramic within the Aurivillius phase material with week ferroelectric memory. However, the partial substitution of Bi ion by a trivalent rare earth resulted in improved ferroelectric polarization. We synthesized Bi4−xSmxTi3O12 by a solution chemistry route and thin films were deposited by spin coating on Pt (Pt/TiO2/SiO2/Si) substrate. X-ray diffraction studies of the films showed a stoichiometric solid solution for the composition x ≤0.85. The films showed fatigue free ferroelectric polarization (Pr = 19.8 µC/cm2) for the composition x = 0.70. The films showed low leakage current at room temperature, showing the possibility of lead free ferroelectric devices.
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Dussan, S., Tomar, M.S., Melgarejo, R.E. et al. Effect of Composition on Ferroelectric Response of Bi4−xSmxTi3O12 Thin Films. MRS Online Proceedings Library 902, 354 (2005). https://doi.org/10.1557/PROC-0902-T03-54