Deposition of Highly (100) Oriented PZT Film Using Lanthanum Nitrate/Nickel Acetate Buffer Layer


Highly (100) oriented Pb(Zr,Ti)O3 [PZT] films were fabricated using lanthanum nitrate/nickel acetate double layers as a buffer layer, regardless of the other deposition conditions, such as the pyrolysis temperature, pyrolysis time, annealing temperature, and heating rate. The buffer layer was also acted as a very effective barrier against Pb-Si interdiffusion, thus allowing for the direct deposition of PZT films on Si, SiO2/Si, and glass substrates. The strong orientation was attributed to the formation of a crystalline intermediate phase between the PZT and lanthanum nitrate during annealing. The lanthanum nitrate/nickel acetate double layers became a lanthanum nickel oxide (LaNiO3), which shows good electrical conductivity, after an annealing process at 650oC. The nature and the role of lanthanum nitrate buffer as a layer for the growth of highly (100) oriented PZT films have been studied. The dielectric, ferroelectric, piezoelectric and electrooptic properties of the highly (100) oriented PZT films with a lanthanum nitrate/nickel acetate buffer layer were measured and compared with the values measured from the (111) and (100) oriented PZT films deposited without buffer layer.

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  1. 1.

    D. L. Polla and L. F. Francis, MRS Bulletin 21 [7] 59 (1996).

    CAS  Article  Google Scholar 

  2. 2.

    X. Du, J. Zheng, U. Belehundu, and K. Uchino, Appl. Phys. Lett. 72 [19] 2421 (1998).

    CAS  Article  Google Scholar 

  3. 3.

    D. V. Taylor and D. Damjanovic, Appl. Phys. Lett. 76 [12] 1615 (2000).

    CAS  Article  Google Scholar 

  4. 4.

    N. Ledermann, P. Muralt, J. Baborowski, S. Gentil, K. Mukati, M. Cantoni. A. Seifert, and N. Setter, Sens. Act. A. 105 162 (2003).

    CAS  Article  Google Scholar 

  5. 5.

    K. G. Brooks, I. M. Reaney, R. Klissurska, Y. Huang, L. Bursill, and N. Setter, J. Mat. Res. 9 [10] 2540 (1994).

    CAS  Article  Google Scholar 

  6. 6.

    S. Chen and I. Chen, J. Am. Ceram. Soc. 77 [9] 2332 (1994); 77 [9] 2337 (1994).

    CAS  Article  Google Scholar 

  7. 7.

    J. J. Choi, C. S. Park, G. T. Park, and H. E. Kim, Appl. Phys. Lett. 85 [20] 4621 (2004).

    CAS  Article  Google Scholar 

  8. 8.

    J. J. Choi, G. T. Park, C. S. Park, J. W. Lee, and H. E. Kim, J. Mater. Res. 19 [12] 3671 (2004).

    CAS  Article  Google Scholar 

  9. 9.

    G. T. Park, J. J. Choi, J. Ryu, H. Fan, and H. E. Kim, Appl. Phys. Lett. 80 [24] 4606 (2002).

    CAS  Article  Google Scholar 

  10. 10.

    X. Du, U. Belehundu, and K. Uchino, Jpn. J. Appl. Phys. Part I., 36 5580 (1997).

    CAS  Article  Google Scholar 

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Correspondence to Jong-Jin Choi.

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Choi, JJ., Hahn, BD., Jang, JH. et al. Deposition of Highly (100) Oriented PZT Film Using Lanthanum Nitrate/Nickel Acetate Buffer Layer. MRS Online Proceedings Library 902, 323 (2005).

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