LaB6 Nanowires and Their Field Emission Properties

Abstract

For field-induced electron emission, the two factors that enable a high emission current density at low applied voltages are (a) low work function of the emitter and (b) sharpness of the emitter tip. We have developed and applied a chemical vapor deposition method to synthesize single-crystalline LaB6 nanowires for applications as point electron emitters. The crystallographic orientation of the grown nanowires can be controlled by the catalysts used in synthesis and their typical diameter is ranged from below 20 nm to over 100 nm. The nanowires’ tip is either hemispherical or flat top with rectangular cross-section depending on the catalyst being utilized. The field emission properties have also been measured from the single nanowire emitters and the results are discussed for applications as point electron sources used in high performance electron optical instruments such as the transmission and scanning electron microscopes.

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Correspondence to Han Zhang.

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Zhang, H., Tang, J., Zhang, Q. et al. LaB6 Nanowires and Their Field Emission Properties. MRS Online Proceedings Library 901, 506 (2005). https://doi.org/10.1557/PROC-0901-Rb15-06

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