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Rapid Optimization of Pentacene Buffer for Rubrene Thin Film Transistors by Using Combinatorial MBE

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Abstract

By means of insertion of thin pentacene buffer layer, we have succeeded in the fabrication of highlyc-axis oriented rubrene (5,6,11,12-tetraphenylnaphthacene) thin films and their field effect transistors (FETs). In the case without pentacene buffers, only amorphous rubrene films were obtained and their FETs did not show operation. After optimization of pentacene buffer by using combinatorial thickness-gradient method, we obtained the crystalline rubrene thin films and their FETs showedp-type operation with a mobility of 0.05 cm2/V·s and an on-off ratio of 106.

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Authors and Affiliations

  1. Materials and Structures Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama, 226-8503, Japan

    M. Haemori, J. Yamaguchi & S. Yaginuma

  2. Graduate School of Frontier Sciences, The University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa, Chiba, 277-8568, Japan

    K. Itaka & H. Koinuma

  3. CREST, Japan Science and Technology Agency, 4-1-8 Honcho Kawaguchi, Saitama, 332-0012, Japan

    K. Itaka & H. Koinuma

  4. NIMS-COMET, 1-2-1 Sengen, Tsukuba, Ibaraki, 305-0047, Japan

    H. Koinuma

Authors
  1. M. Haemori
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  2. J. Yamaguchi
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  3. S. Yaginuma
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  4. K. Itaka
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  5. H. Koinuma
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Haemori, M., Yamaguchi, J., Yaginuma, S. et al. Rapid Optimization of Pentacene Buffer for Rubrene Thin Film Transistors by Using Combinatorial MBE. MRS Online Proceedings Library 894, 08940335 (2005). https://doi.org/10.1557/PROC-0894-LL03-35

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  • DOI: https://doi.org/10.1557/PROC-0894-LL03-35

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