Comparative investigation of quantum-dot-like localization centers in InGaN quantum well and quantum dot structures


We present comparative micro-photoluminescence measurements on InGaN/GaN quantum well and quantum dot samples. Single sharp emission lines were investigated for both kinds of samples as a function of temperature and excitation density. For the sharp emission lines of the quantum dots and the strong localization centers in the quantum well samples comparable experimental findings were obtained such as the independence of their spectral position of the excitation density and the observation of binding and antibinding multiexcitonic states giving clear evidence for the quantum dot nature of localization centers.

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This work has been supported by the Deutsche Forschungsgemeinschaft in the framework of the Research Group 506, “Physics of Nitride-Based Nanostructured Light-Emitting Devices”.

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Sebald, K., Lohmeyer, H., Gutowski, J. et al. Comparative investigation of quantum-dot-like localization centers in InGaN quantum well and quantum dot structures. MRS Online Proceedings Library 892, 2502 (2005).

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