Effects of GaN passivation with SiO2 and SiNx studied by photoluminescence and surface potential electric force microscopy


The influence of passivation with SiO2 and SiNx on optical properties and surface band bending in unintentionally doped GaN has been studied by steady-state photoluminescence (PL) and surface potential electric force microscopy (SP-EFM). For both types of passivation we observed a significant increase of PL intensity in air ambient at room temperature. The measured surface potential was the same for control and passivated samples within the experimental error. The value of the surface band-bending was determined as 1.0±0.2 eV in all cases. We suggest that the strong enhancement of PL is caused by reduction of contribution of the surface states to recombination of photogenerated carriers after passivation.

This is a preview of subscription content, access via your institution.


  1. 1

    O. Cojocari, V. Popa, V. V. Ursaki, I. M. Tiginyanu, H. L. Hartnagel, and I. Daumiller, Semicond. Sci. Technol. 19 (2004), p. 1273

    CAS  Article  Google Scholar 

  2. 2

    V. Adivarahan, G. Simin, J. W. Yang, A. Lunev, M. Asif Khan, N. Pala, M. Shur, and R. Gaska, Appl. Phys. Lett., 77(6) (2000), p. 863

    CAS  Article  Google Scholar 

  3. 3

    C. Bae, G. Lucovsky, Surface Science 566-568 (2004), p. 356

    Article  Google Scholar 

  4. 4

    C. Bae, C. Krug, G. Lucovsky, A. Chakraborty, and U. Mishra, J. Appl. Phys., 96(5) (2004), p. 2674

    CAS  Article  Google Scholar 

  5. 5

    B. M. Green, K. K. Chu, E. M. Chumbes, J. A. Smart, J. R. Shealy, and L. F. Eastman, IEEE Electron Device Letters, 21(6) (2000), p. 268

    CAS  Article  Google Scholar 

  6. 6

    P. Javorka, J. Bernat, A. Fox, M. Marso, H. Luth, and P. Kordos, Electr. Lett., 39(15) (2003), p. 1155

    CAS  Article  Google Scholar 

  7. 7

    B. Luo, R. Mehandru, J. Kim, F. Ren, B. P. Gila, A. H. Onstine, C. R. Abernathy, S. J. Pearton, R. Fitch, J. Gillespie, T. Jenkins, J. Sewell, D. Via, A. Crespo, and Y. Irokawa, Journal of the Electronic Society, 149(11) (2002), p. G613

    CAS  Article  Google Scholar 

  8. 8

    Y. T. Moon, Y. Fu, F. Yun, S. Dogan, M. Mikkelson, D. Johnstone, and H. Morkoç, Phys. Stat. Sol. (a) 202(5), (2005), p. 718

    CAS  Article  Google Scholar 

  9. 9

    T. Hashizume, S. Ootomo, T. Inagaki, and H. Hasegawa, J. Vac. Sci. Technol. B 21(4) (2003), p. 1828

    CAS  Article  Google Scholar 

  10. 10

    D. G. Park, M. Tao, D. Li, A. E. Botchkarev, Z. Fan, H. Liang, J. R. Abelson, A. Rockett, H. Morkoç, A. R. Heyd, and S. A. Alterovitz, J. Vac Sci. Technol. B. Vol. 14(4), (1996), p. 2674

    CAS  Article  Google Scholar 

  11. 11

    V. M. Bermudez, J. Appl. Phys. 80, (1996), p. 1190

    CAS  Article  Google Scholar 

  12. 12

    M. A. Reshchikov, S. Sabuktagin, D. K. Johnstone, and H. Morkoç, J. Appl. Phys. 96, (2004), p. 2556

    CAS  Article  Google Scholar 

  13. 13

    Sang-Jun Cho, S. Dogan, S. Sabuktagin, M. A. Reshchikov, D. K. Johnstone, and H. Morkoç, Appl. Phys. Lett. 84, (2004), p. 3070

    CAS  Article  Google Scholar 

  14. 14

    M. A. Reshchikov and R. Y. Korotkov, Phys. Rev. B 64, (2001), p. 115205

    Article  Google Scholar 

  15. 15

    Michael A. Reshchikov and Hadis Morkoç, J. Appl. Phys. 97, (2005), p. 061301

    Article  Google Scholar 

  16. 16

    T. Hashizume, S. Ootomo, S. Oyama, M. Konishi, and H. Hasegawa, J. Vac. Technol. B 19(4), (2001), p. 1675

    CAS  Article  Google Scholar 

  17. 17

    W. Mönch, “Semiconductor surface and interfaces ”, Springer-Verlag, (1993), p. 51.

    Google Scholar 

  18. 18

    H. Hasegawa, T. Inagaki, S. Ootomo, and T. Hashizume, J. Vac. Sci. Technol. B 21(4), (2003), p. 1844

    CAS  Article  Google Scholar 

  19. 19

    M. Zafar Iqbal, M. A. Reshchikov, L. He, and H. Morkoç, J. Elec. Materials, 32(5), (2003), p. 346

    CAS  Article  Google Scholar 

Download references


This work was funded by AFOSR (Dr. G. L. Witt), NSF (Dr. L. Hess and Dr. U. Varshney), and ONR (Dr. C. E. C. Wood).

Author information



Corresponding author

Correspondence to S. Chevtchenko.

Rights and permissions

Reprints and Permissions

About this article

Verify currency and authenticity via CrossMark

Cite this article

Chevtchenko, S., Reshchikov, M., Zhu, K. et al. Effects of GaN passivation with SiO2 and SiNx studied by photoluminescence and surface potential electric force microscopy. MRS Online Proceedings Library 892, 2309 (2005). https://doi.org/10.1557/PROC-0892-FF23-09

Download citation