The influence of passivation with SiO2 and SiNx on optical properties and surface band bending in unintentionally doped GaN has been studied by steady-state photoluminescence (PL) and surface potential electric force microscopy (SP-EFM). For both types of passivation we observed a significant increase of PL intensity in air ambient at room temperature. The measured surface potential was the same for control and passivated samples within the experimental error. The value of the surface band-bending was determined as 1.0±0.2 eV in all cases. We suggest that the strong enhancement of PL is caused by reduction of contribution of the surface states to recombination of photogenerated carriers after passivation.
This is a preview of subscription content, access via your institution.
Buy single article
Instant access to the full article PDF.
Tax calculation will be finalised during checkout.
O. Cojocari, V. Popa, V. V. Ursaki, I. M. Tiginyanu, H. L. Hartnagel, and I. Daumiller, Semicond. Sci. Technol. 19 (2004), p. 1273
V. Adivarahan, G. Simin, J. W. Yang, A. Lunev, M. Asif Khan, N. Pala, M. Shur, and R. Gaska, Appl. Phys. Lett., 77(6) (2000), p. 863
C. Bae, G. Lucovsky, Surface Science 566-568 (2004), p. 356
C. Bae, C. Krug, G. Lucovsky, A. Chakraborty, and U. Mishra, J. Appl. Phys., 96(5) (2004), p. 2674
B. M. Green, K. K. Chu, E. M. Chumbes, J. A. Smart, J. R. Shealy, and L. F. Eastman, IEEE Electron Device Letters, 21(6) (2000), p. 268
P. Javorka, J. Bernat, A. Fox, M. Marso, H. Luth, and P. Kordos, Electr. Lett., 39(15) (2003), p. 1155
B. Luo, R. Mehandru, J. Kim, F. Ren, B. P. Gila, A. H. Onstine, C. R. Abernathy, S. J. Pearton, R. Fitch, J. Gillespie, T. Jenkins, J. Sewell, D. Via, A. Crespo, and Y. Irokawa, Journal of the Electronic Society, 149(11) (2002), p. G613
Y. T. Moon, Y. Fu, F. Yun, S. Dogan, M. Mikkelson, D. Johnstone, and H. Morkoç, Phys. Stat. Sol. (a) 202(5), (2005), p. 718
T. Hashizume, S. Ootomo, T. Inagaki, and H. Hasegawa, J. Vac. Sci. Technol. B 21(4) (2003), p. 1828
D. G. Park, M. Tao, D. Li, A. E. Botchkarev, Z. Fan, H. Liang, J. R. Abelson, A. Rockett, H. Morkoç, A. R. Heyd, and S. A. Alterovitz, J. Vac Sci. Technol. B. Vol. 14(4), (1996), p. 2674
V. M. Bermudez, J. Appl. Phys. 80, (1996), p. 1190
M. A. Reshchikov, S. Sabuktagin, D. K. Johnstone, and H. Morkoç, J. Appl. Phys. 96, (2004), p. 2556
Sang-Jun Cho, S. Dogan, S. Sabuktagin, M. A. Reshchikov, D. K. Johnstone, and H. Morkoç, Appl. Phys. Lett. 84, (2004), p. 3070
M. A. Reshchikov and R. Y. Korotkov, Phys. Rev. B 64, (2001), p. 115205
Michael A. Reshchikov and Hadis Morkoç, J. Appl. Phys. 97, (2005), p. 061301
T. Hashizume, S. Ootomo, S. Oyama, M. Konishi, and H. Hasegawa, J. Vac. Technol. B 19(4), (2001), p. 1675
W. Mönch, “Semiconductor surface and interfaces ”, Springer-Verlag, (1993), p. 51.
H. Hasegawa, T. Inagaki, S. Ootomo, and T. Hashizume, J. Vac. Sci. Technol. B 21(4), (2003), p. 1844
M. Zafar Iqbal, M. A. Reshchikov, L. He, and H. Morkoç, J. Elec. Materials, 32(5), (2003), p. 346
This work was funded by AFOSR (Dr. G. L. Witt), NSF (Dr. L. Hess and Dr. U. Varshney), and ONR (Dr. C. E. C. Wood).
About this article
Cite this article
Chevtchenko, S., Reshchikov, M., Zhu, K. et al. Effects of GaN passivation with SiO2 and SiNx studied by photoluminescence and surface potential electric force microscopy. MRS Online Proceedings Library 892, 2309 (2005). https://doi.org/10.1557/PROC-0892-FF23-09