High quality GaN layers grown on slightly miscut sapphire wafers

Abstract

HVPE grown layers typically show a high density of pyramidal structures on the surface. We found that a slight off-orientation of the substrate totally suppresses the development of these structures. Further we found that a misorientation toward the m-plane of GaN features a smoother surface morphology, compared to an off-orientation towards the a-plane. After the improvement of the surface morphology and other properties of the HVPE grown layers, we studied self-separation processes. Our approaches to remove the thick GaN-layer from the substrate were a low-temperature interlayer and a structured dielectric mask.

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Acknowledgment

We gratefully acknowledge the supply of the HVPE machine and the steady support by Aixtron AG, and in particular by D. Schmitz et al. We acknowledge Monocrystal PLC (Russia) for the supply of the off-oriented sapphire wafers. This work was partially financially and technically supported by the Ferdinand-Braun-Institut für Höchstfrequenztechnik Berlin within a research contract funded by the Bundesministerium für Bildung und Forschung.

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Correspondence to P. Brüeckner.

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Brüeckner, P., Feneberg, M., Thonke, K. et al. High quality GaN layers grown on slightly miscut sapphire wafers. MRS Online Proceedings Library 892, 2104 (2005). https://doi.org/10.1557/PROC-0892-FF21-04

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