Plasma-Assisted MOCVD Growth of ZnO Thin Films

Abstract

ZnO thin films have been grown by metalorganic chemical vapor deposition (MOCVD) also plasma assisted (PA-MOCVD) on c-axis oriented sapphire (0001) and Si(001) substrates using the alternative Zn(TTA)2·tmed (HTTA=2-thenoyltrifluoroacetone,TMED=N,N,N’,N’-tetramethylethylendiamine) precursor. The structural, morphological and optical properties of ZnO films have been investigated. The results show that the O2 plasma assisted growth results in an improvement of the structure, in smoother morphologies and in a better optical quality with a sharp and intense exciton of ZnO films.

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Acknowledgment

This work has been partially supported by INSTM (Consorzio Interuniversitario Nazionale per la Scienza e Tecnologia dei Materiali) within the PRISMA project.

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Correspondence to Maria Losurdo.

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Losurdo, M., Giangregorio, M.M., Capezzuto, P. et al. Plasma-Assisted MOCVD Growth of ZnO Thin Films. MRS Online Proceedings Library 892, 906 (2005). https://doi.org/10.1557/PROC-0892-FF18-06-EE09-06

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