Highly doped p-type a-plane GaN grown on r-plane sapphire substrate

Abstract

Mg-doped p-type a-plane GaN films were grown on unintentionally doped a-plane GaN templates by metalorganic vapor phase epitaxy (MOVPE). The Mg concentration in a-plane GaN increased with increasing Mg source gas flow rate. A maximum hole concentration of 2.0 × 1018 cm−3 with a hole mobility of 4.5 cm2/Vs and resistivity of 0.7 Ω·cm were achieved. The activation ratio was 5.0 × 10-2. It was found that a maximum hole concentration in p-type a-plane GaN was higher than that in p-type c-plane GaN. The activation energy of Mg acceptors in p-type a-plane GaN with the maximum hole concentration was found to be 118 meV by temperature-dependent Hall-effect measurement.

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Acknowledgment

This work was partly supported by the MEXT (Contract Nos. 15206003 and 17650155), ARC in Nagoya University, CASIO SCIENCE PROMOTION FUNDATION and MURATA FOUNDATION.

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Tsuchiya, Y., Okadome, Y., Furukawa, H. et al. Highly doped p-type a-plane GaN grown on r-plane sapphire substrate. MRS Online Proceedings Library 892, 1706 (2005). https://doi.org/10.1557/PROC-0892-FF17-06

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