Normally Off-Mode AlGaN/GaN Heterostructure Field Effect Transistor Using P-Type Gate Contact


A normally off-mode AlGaN/GaN heterostructure field effect transistor (HFET) using a p-type GaN gate was fabricated and their static properties were compared with those of HFET having a Schottky gate. HFET having a p-GaN gate contact shows a very low leakage current density of 18.2 μA/mm at VGS and VDS of 0 V and 20 V, respectively.

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This work was partly supported by the MEXT (Contracts No. 15206003 and 17650155) and Akasaki Research Center in Nagoya University.

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Correspondence to Norio Tsuyukuchi.

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Tsuyukuchi, N., Nagamatsu, K., Hirose, Y. et al. Normally Off-Mode AlGaN/GaN Heterostructure Field Effect Transistor Using P-Type Gate Contact. MRS Online Proceedings Library 892, 1503 (2005).

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