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Normally Off-Mode AlGaN/GaN Heterostructure Field Effect Transistor Using P-Type Gate Contact

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Abstract

A normally off-mode AlGaN/GaN heterostructure field effect transistor (HFET) using a p-type GaN gate was fabricated and their static properties were compared with those of HFET having a Schottky gate. HFET having a p-GaN gate contact shows a very low leakage current density of 18.2 μA/mm at VGS and VDS of 0 V and 20 V, respectively.

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Reference

  1. H. Okumura: Oyo Butsuri. Phys. 73 (2004) 315 [in Japanese]

    Google Scholar 

  2. J. S. Moon, D. Wong, T. Hussain, M. Micovic, P. Deelman, M. Hu, M. Antclifee, C. Ngo, P. Hashimoto and L. McCray: Conf. Dig. 60th Device Research Conf. (2002) 23.

    Google Scholar 

  3. A. Endoh, Y. Yamashita, K. Ikeda, M. Higashiwaki, K. Hikosaka, T. Matsui, S. Hiyamizu and T. Mimura: Jpn. J. Appl. Phys. 43 (2004) 2258.

    Google Scholar 

  4. T. Hashizume, S. Anantathanasarn, N. Negoro, E. Sano, H. Hasegawa, K. Kumakura and T. Makimoto: Jpn. J. Appl. Phys. 43 (2004) 777.

    Google Scholar 

  5. X. Hu, Gi Simin, J. Yang, M. Asif Khan, R. Gaska and M. S. Shur: Elec. Lett. 36 (2000) 753.

    Google Scholar 

  6. H. Amano, N. Sawaki, I. Akasaki and Y. Toyoda: Appl. Phys. Lett. 48 (1986) 353.

    Google Scholar 

  7. N. Tsuyukuchi, K. Nagamatsu, Y. Hirose, M. Iwaya, S. Kamiyma, H. Amano and I. Akasaki: submitted to Jpn. J. Appl. Phys.

  8. K. Kumakura, T. Makimoto, N. Kobayashi, T. Hashizume, T. Fukui and H. Hasegawa: Appl. Phys. Lett. 86 (2005) 052105.

    Google Scholar 

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Acknowledgment

This work was partly supported by the MEXT (Contracts No. 15206003 and 17650155) and Akasaki Research Center in Nagoya University.

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Authors and Affiliations

  1. Faculty of Science and Technology, 21st Century COE Program “Nano-Factory”, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya, 468-8502, Japan

    Norio Tsuyukuchi, Kentaro Nagamatsu, Yoshikazu Hirose, Motoaki Iwaya, Satoshi Kamiyama, Hiroshi Amano & Isamu Akasaki

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  1. Norio Tsuyukuchi
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  2. Kentaro Nagamatsu
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  3. Yoshikazu Hirose
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  4. Motoaki Iwaya
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  5. Satoshi Kamiyama
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  6. Hiroshi Amano
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  7. Isamu Akasaki
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Tsuyukuchi, N., Nagamatsu, K., Hirose, Y. et al. Normally Off-Mode AlGaN/GaN Heterostructure Field Effect Transistor Using P-Type Gate Contact. MRS Online Proceedings Library 892, 1503 (2005). https://doi.org/10.1557/PROC-0892-FF15-03

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  • DOI: https://doi.org/10.1557/PROC-0892-FF15-03

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