Abstract
In this investigation, Schottky diodes with different device sizes (150μm, 420μm and 700μm) were fabricated on the Ga-face of a free-standing n−-GaN wafer produced by Kyma Technologies, Inc. Full area back side ohmic contact was prepared on the N-face of the bulk GaN using Ti/Al. Without any edge-termination scheme, a relatively high reverse breakdown voltage of 240V was achieved. The reverse breakdown voltage decreases as the device size increases. The forward turn-on voltage was as low as 2.4V at room temperature for the 150μm diameter Schottky diodes. The best on-state resistance was 7.56 mΩcm−2 for diodes with VB=240V, producing a figure-of-merit (VB2/RON) of 7.6 MWcm−2. The Schottky diode also showed an extremely short reverse recovery time (< 20 ns) switching from forward bias to reverse bias.
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Acknowledgements
The authors would like to thank Dr. O. Wayne Koger at U. S. Army and Dr. Fred Clarke at the U. S. Army Space and Missile Defense Command. The project was funded by Missile Defense Agency (MDA) through the U. S. Army Space and Missile Defense Command under contract number W9113M-04-C-0082.
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Zhou, Y., Wang, D., Ahyi, C. et al. Fabrication and device characteristics of bulk GaN-based Schottky diodes. MRS Online Proceedings Library 892, 1309 (2005). https://doi.org/10.1557/PROC-0892-FF13-09
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DOI: https://doi.org/10.1557/PROC-0892-FF13-09