Electrical Domains and Sub-millimeter Signal Generation in AlGaN/GaN Superlattices

MRS Online Proceedings Library volume 892, Article number: 1307 (2005) Cite this article

Abstract

The paper discusses the feasibility of a submillimeter-signal source made of AlGaN/GaN superlattice. Negative differential conductivity, electrical domain formation, current oscillations, and power efficiency of a perspective source are described. We relate the superlattice geometry and conduction band profile, distorted by polarization fields, to the oscillation frequency and power efficiency of the device. We also determine the optimal Al content, superlattice period, and the parameters of external circuit that favor sub-millimeter wave generation.

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Acknowledgements

Authors thank P. H. Siegel, F. Maiwald, and E. Schlecht for valuable discussion.

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Affiliations

  1. WaveBand Corporation., Irvine, CA, 92614, USA

    Irina Gordion & Vladimir I. Litvinov

  2. Department of Applied Physics, University of Michigan, 2477 Randall Laboratory, Ann Arbor, MI, 48109, USA

    Alexander Manasson

Authors
  1. Irina Gordion
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  2. Alexander Manasson
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  3. Vladimir I. Litvinov
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Correspondence to Irina Gordion.

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Gordion, I., Manasson, A. & Litvinov, V.I. Electrical Domains and Sub-millimeter Signal Generation in AlGaN/GaN Superlattices. MRS Online Proceedings Library 892, 1307 (2005). https://doi.org/10.1557/PROC-0892-FF13-07

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