Double-Ion-Implanted GaN MESFETs with Extremely Low Source/Drain Resistance

Abstract

Incorporation of Si ion implantation to GaN metal semiconductor field effect transistor (MESFET) processing has been demonstrated. The channel and source/drain regions formed using Si ion implantation into undoped GaN on sapphire substrate. In comparison with the conventional devices without ion implanted source/drain structures, the ion implanted devices showed excellent device performance. On-state resistance reduces from 210 Ω-mm to 105 Ω-mm. Saturation drain current and maximum transconductance increase from 36 mA/mm to 78 mA/mm and from 3.8 mS/mm to 10 mS/mm, respectively.

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Correspondence to Kazuki Nomoto.

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Nomoto, K., Ito, N., Tajima, T. et al. Double-Ion-Implanted GaN MESFETs with Extremely Low Source/Drain Resistance. MRS Online Proceedings Library 892, 1306 (2005). https://doi.org/10.1557/PROC-0892-FF13-06

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