Abstract
Hydride-Metalorganic Vapor Phase Epitaxy (H-MOVPE) was used to grow a series of films on c-Al2O3 substrates. Depending on the growth temperature and HCl/TMIn molar ratio, InN deposited as a continuous film or a collection of micro or nanorods, or no InN growth was observed. A chemical equilibrium analysis of the In-N-H-Cl system predicts both InN growth and etching regimes with the nanorod growth observed near the growth-etching transition. All InN rod structures demonstrated well faceted hexagonal structure with a near random orientation of the rods, while the films were polycrystalline.
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H. Lu, W.J. Schaff, L.F. Eastman, Mater. Res. Soc. Symp. Proc. 693 (2002) 9.
O. Kryliouk, H.J. Park, H.T. Wang, B.S. Kang, T.J. Anderson, F. Ren and S.J. Pearton, J. Vac. Sci. Technol. B, 23(5), 1891(2005).
H. Lu, W.J. Schaff, L.F. Eastman, J. Appl. Phys. 96 (2004) 3577.
A. Yamamoto, M. Tsujino, M. Ohkubo, A. Hashimoto, Sol. Energy Mater. Sol. Cells 35 (1994) 53.
E. Starikov, P. Shiktorov, V. Gruzinskis, L. Reggiani, L. Varani, J.C. Vaissiere, Jian H. Zhao, Physica B 314 (2002) 171.
T. Inushima, V.V. Mamutin, V.A. Vekshin, S.V. Ivanov, T. Sakon, M. Motokawa, S. Ohoya, J. Cryst. Growth 227–228 (2001) 481.
V. Yu Davydov, A.A. Klochikhin, V.V. Emtsev, S.V. Ivanov, V.V. Vekshin, F. Bechstedt, J. Furthmuller, H. Harima, A.V. Mudryi, A. Hashimoto, A. Yamamoto, A.J. Aderhold, J. Graul, E.E. Haller, Phys. Status Solidi b 230 (2002) R4.
J. Wu, W. Walukiewicz, W. Shan, K.M. Yu, J.W. Ager III, E.E. Haller, Hai Lu, W.J. Schaff, Phys. Rev. B 66 (2002) 201403.
K. Sugita, H. Takatsuka, A. Hashimoto, A. Yamamoto, Phys. Status Solidi b 240 (2003) 421.
O. Briot, B. Maleyre, S. Ruffenach, B. Gil, C. Pinquier, F. Demangeot, J. Frandon, J. Cryst. Growth 269 (2004) 22.
K.S.A. Butcher, M. Wintrebert-Fouquet, P.P.-T. Chen, K.E. Prince, H. Timmers, S.K. Shrestha, T.V. Shubina, S.V. Ivanov, R. Wuhrer, M.R. Phillips, B. Monemar, Phys. Status Solidi c 2 (2005) 2263.
H.J. Hovel, J.J. Cuomo, Appl. Phys. Lett. 20 (1972) 71.
V.A. Tyagai, A.M. Evstigneev, A.N. Krasiko, A.F. Andreeva, V.Ya. Malakhov, Sov. Phys. Semicond. 11 (1977) 1257.
B.R. Natarajan, A.H. Eltoukhy, J.E. Greene, T.L. Barr, Thin Solid Films 69 (1980) 201.
T.L. Tansley, C.P. Foley, J. Appl. Phys. 59 (1986) 3241.
K.L. Westra, R.P.W. Lawson, M.J. Brett, J. Vac. Sci. Technol. A 6 (1988) 1730.
B.T. Sullivan, R.R. Parsons, K.L. Westra, M.J. Brett, J. Appl. Phys 64 (1988) 144.
K.S.A. Butcher, M. Wintrebert-Fouquet, P.P.-T. Chen, T.L. Tansley, S. Sriheaw, Mater. Res. Symp. Proc. 693 (2002) 341.
Motlan, E.M. Goldys, T.L. Tansley, J. Cryst. Growth 241 (2002) 165.
D.B. Haddad, J.S. Takur, V.M. Naik, G.W. Auner, R. Naik, L.E. Wenger, Mater Res. Soc. Symp. Proc. 743 (2003) 701.
A. Jain, S. Raghavan, J.M. Redwing, J. Cryst. Growth 269 (2004) 128.
N. Takahashi, A. Niwa, T. Nakamura, J. Phys. Chem. Solids 65 (2004) 1259.
E. Dimakis, K. Tsagaraki, E. Iliopoulos, Ph. Komninou, Th. Kehagias, A. Delimitis and A. Georgakilas, J. Cryst. Growth, 278(2005) 367.
J. Grandal, M.A. Sanchez-Garcia, J. Cryst. Growth 278 (2005) 373.
A. Yamamoto, M. Adachi, A. Hashimoto, J. Cryst. Growth 230 (2001) 351.
Y. Sato, S. Sato, J. Cryst. Growth 146 (1995) 262.
A. Yamamoto, T. Shin-ya, T. Sugiura, A. Hashimoto, J. Cryst. Growth 189 /190 (1998) 461.
Z.X. Bi, R. Zhang, Z.L. Xie, X.Q. Xiu, Y.D. Ye, B. Liu, S.L. Gu, B. Shen, Y. Shi, Y.D. Zheng, Mater. Lett. 58 (2004) 3641.
K. Xu and A. Yoshikawa, Appl. Phys. Lett. 83, (2003)14.
S.W. Kang, diss., University of Florida 2004.
Z.H. Lan, W.M. Wang, C.L. Sun, S.C. Shi, C.W. Hsu, T.T. Chen, K.H. Chen, C.C. Chen, Y.F. Chen, L.C. Chen, J. Cryst. Growth 269 (2004) 87.
J. Zhang, L. Zhang, X. Peng and X. Wang, J. Mater. Chem (2002) 12, 802.
C. H. Liang, L. C. Chen, J. S. Hwang, K. H. Chen, Y. T. Hung and Y. F. Chen, Appl. Phys. Lett. 81, 22 (2002).
M. C. Johnson, C. J. Lee, E. D. Bourret-Courchesne, S. L. Konsek, S. Aloni, W. Q. Han, and A. Zettl, Appl. Phys. Lett. 85, 5670 (2004).
O. Kryliouk, M. Reed, T. Dann, T. Anderson and B. Chai, Mat. Sci. Eng. B59, 116–119 (1999).
B. Sundman, B. Jansson, J.O. Andersson, CALPHAD 9 (1985) 153.
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The authors would like to thank the Major Analytical Instrumentation Center, Department of Materials Science and Engineering, University of Florida.
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Park, H., Kang, S., Kryliouk, O. et al. Morphological study of InN films and nanorods grown by H-MOVPE. MRS Online Proceedings Library 892, 1109 (2005). https://doi.org/10.1557/PROC-0892-FF11-09
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DOI: https://doi.org/10.1557/PROC-0892-FF11-09