Morphological study of InN films and nanorods grown by H-MOVPE

Abstract

Hydride-Metalorganic Vapor Phase Epitaxy (H-MOVPE) was used to grow a series of films on c-Al2O3 substrates. Depending on the growth temperature and HCl/TMIn molar ratio, InN deposited as a continuous film or a collection of micro or nanorods, or no InN growth was observed. A chemical equilibrium analysis of the In-N-H-Cl system predicts both InN growth and etching regimes with the nanorod growth observed near the growth-etching transition. All InN rod structures demonstrated well faceted hexagonal structure with a near random orientation of the rods, while the films were polycrystalline.

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Acknowledgements

The authors would like to thank the Major Analytical Instrumentation Center, Department of Materials Science and Engineering, University of Florida.

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Correspondence to H.J. Park.

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Park, H., Kang, S., Kryliouk, O. et al. Morphological study of InN films and nanorods grown by H-MOVPE. MRS Online Proceedings Library 892, 1109 (2005). https://doi.org/10.1557/PROC-0892-FF11-09

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