Gallium Nitride is of interest due to its direct bandgap, which allows for efficient emission in the near-UV range. Bulk GaN is already in use in solid-state devices that exploit its emissive properties, however, the promise of GaN nanocrystals as tunable emitters for use in light-emitting devices and lasers has led to the recent exploration of nanocrystalline GaN synthesis routes. Here we discuss the use of nonthermal plasmas for the synthesis of nanocrystalline pow-ders of GaN. The particles were examined using transmission electron microscopy and x-ray photoelectron spectroscopy.
This is a preview of subscription content, access via your institution.
Buy single article
Instant access to the full article PDF.
Tax calculation will be finalised during checkout.
R. Garcia, A. Thomas, A. Bell, M. Stevens, and F. A. Ponce, Mat. Res. Soc. Proc., 798, Y10.75.1 (2003)
T.J. Goodwin, V. Leppert, S.H. Risbud, I. M. Kennedy, and H. W. H. L. Howard, Appl. Phys. Lett., 70, 3122 (1997).
S. Coe, W.-K. Woo, M. Bawendi and V. Bulovic, Nature, 420: p. 800 (2002).
I. Gur, N. A. Frommer, M. L. Geier, and A. P. Alivisatos, Science, 310, 462 (2005).
Y. Azuma, M. Shimada, and K. Okuyama., Chemical Vapor Deposition 10, 11–13 (2004).
T. Honda, M. Akiyama, S. Egawa, Y. Aoki, N. Obinata, and H. Kawanishi, Phys. Stat. Sol. (a) 201, 2814–2817, (2004).
L. Mangolini, E. Thimsen, and U. Kortshagen, Nano Letters, 5, 655–659, (2005).
A. Bapat, C. Perrey, S. A. Campbell, C. B. Carter, and U. Kortshagen, J. Appl. Phys. 94, 1969–1974 (2003).
This work was supported in part by the MRSEC Program of the National Science Foundation under award number DMR-0212302 and by IGERT grant DGE-0114372.
About this article
Cite this article
Anthony, R., Thimsen, E., Johnson, J. et al. A Non-thermal Plasma Reactor for the Synthesis of Gallium Nitride Nanocrystals. MRS Online Proceedings Library 892, 1105 (2005). https://doi.org/10.1557/PROC-0892-FF11-05