Fe-Centers in GaN as Candidates for Spintronics Applications

Abstract

The potential use of Fe doped GaN for spintronics applications requires a complete understanding of the electronic structure of Fe in all of its charge states. To address these issues, a set of 500 µm thick freestanding HVPE grown GaN:Fe crystals with different Fe-concentration levels ranging from 5×1017 to 2×1020cm−3 was studied by means of photoluminescence, photoluminescence excitation (PLE) and Fourier transform infrared (FTIR) transmission experiments. The Fe3+/2+ charge transfer (CT) level was determined to be at 2.86 ± 0.01 eV above the valence band maximum considerably lower than the previously reported value of 3.17 ± 0.10 eV. A bound state of the form (Fe2+, hVB) with a binding energy of 50 ± 10 meV has been established as an excited state of Fe3+. FTIR transmission measurements revealed an internal (5E-5T2) transition of Fe2+ around 400 eV which, until now, was believed to be degenerate with the conduction band.

Consequently, a second CT band was detected in PLE spectra.

This is a preview of subscription content, access via your institution.

References

  1. [1]

    S. J. Pearton, C. R. Abernathy, G. T. Thaler, R. M. Frazier, D. P. Norton, F. Ren, Y. D. Park, J. M. Zavada, I. A. Buyanova, W. M. Chen and A. F. Hebard, Journal of Physics: Condensed Matter page R209 (2004).

    Google Scholar 

  2. [2]

    H. Ohno, Science 281, 951 (1998).

    CAS  Article  Google Scholar 

  3. [3]

    T. Dietl, H. Ohno and F. Matsukura, Physical Review B 63, 195205(2001).

    Article  Google Scholar 

  4. [4]

    F. S. Ham and G. A. Slack, Physical Review B 4, 777 (1971).

    Article  Google Scholar 

  5. [5]

    T. Dietl, H. Ohno, F. Matsukura, J. Cibert and D. Ferrand, Science 287, 1019 (2000).

    CAS  Article  Google Scholar 

  6. [6]

    K. Maier, M. Kunzer, U. Kaufmann, J. Schneider, B. Monemar, I. Akasaki and H. Amano, Materials Science Forum 143-147, 93 (1994).

    Google Scholar 

  7. [7]

    R. Heitz, P. Thurian, I. Loa, L. Eckey, A. Hoffmann, I. Broser, K. Pressel, B. K. Meyer and E. N. Mokhov, Applied Physics Letters 67, 2822 (1995).

    CAS  Article  Google Scholar 

  8. [8]

    R. Heitz, P. Maxim, L. Eckey, P. Thurian, A. Hoffmann, I. Broser, K. Pressel and B. K. Meyer, Physical Review B 55, 4382 (1997).

    CAS  Article  Google Scholar 

  9. [9]

    J. M. Langer and H. Heinrich, Phys. Rev. Lett. 55, 1414 (1985).

    CAS  Article  Google Scholar 

  10. [10]

    M. L. J. M. Langer, C. Delerue and H. Heinrich, Physical Review B 38, 7723 (1988).

    CAS  Article  Google Scholar 

  11. [11]

    H. Siegle, L. Eckey, A. Hoffmann, C. Thomsen, B. K. Meyer, D. Schikora, M. Hankeln and K. Lischka, Solid State Communications 96, 943 (1995).

    CAS  Article  Google Scholar 

  12. [12]

    V. Y. Davydov, Y. E. Kitaev, I. N. Goncharuk, A. N. Smirnov, J. Graul, O. Semchinova, D. Uffmann, M. B. Smirnov, A. P. Mirgorodsky and R. A. Evarestov, Physical Review B 58, 12899 (1998).

    CAS  Article  Google Scholar 

  13. [13]

    P. Thurian, G. Kaczmarczyk, H. Siegle, R. Heitz, A. Hoffmann, I. Broser, B. K. Meyer, R. Hoffbauer and U. Scherz, Materials Science Forum 196-201, 1571 (1995).

    Article  Google Scholar 

  14. [14]

    C. Goebel, C. Schrepel, U. Scherz, P. Thurian, G. Kaczmarczyk and A. Hoffmann, Materials Science Forum 258-263, 1173 (1997).

    Article  Google Scholar 

  15. [15]

    L. Podlowski, R. Heitz, T. Wolf, A. Hoffmann, D. Bimberg, I. Broser and W. Ulrici, Materials Science Forum 143-147, 311 (1994).

    Google Scholar 

  16. [16]

    K. Pressel, G. Ruckert, A. Dornen and K. Thonke, Phys. Rev. B 46, 13171 (1992).

    CAS  Article  Google Scholar 

  17. [17]

    K. Pressel, A. Dörnen, G. Rückert and K. Thonke, Phys. Rev. B 47, 16267 (1993).

    CAS  Article  Google Scholar 

  18. [18]

    A. Hoffmann, L. Eckey, P. Maxim, J.-C. Holst, R. Heitz, D. M. Hofmann, D. Kovalev, G. Steude, D. Volm, B. K. Meyer, T. Detchprohm, H. Amano and I. Akasaki, Solid State Electronics 41, 275 (1997).

    CAS  Article  Google Scholar 

  19. [19]

    L. Podlowski, R. Heitz, P. Thurian, A. Hoffmann and I. Broser, Journal of Luminescence 48, 252 (1994).

    Article  Google Scholar 

Download references

Author information

Affiliations

Authors

Corresponding author

Correspondence to Enno Malguth.

Rights and permissions

Reprints and Permissions

About this article

Verify currency and authenticity via CrossMark

Cite this article

Malguth, E., Hoffmann, A., Phillips, M. et al. Fe-Centers in GaN as Candidates for Spintronics Applications. MRS Online Proceedings Library 892, 505 (2005). https://doi.org/10.1557/PROC-0892-FF07-05-EE05-05

Download citation