Electron Transport Properties of InN

Abstract

High-energy particle irradiation has been used to control the free electron concentration and electron mobility in InN by introducing native point defects that act as donors. A direct comparison between theoretical calculations and the experimental electron mobility suggests that scattering by triply-charged donor defects limits the mobility in irradiated samples across the entire range of electron concentrations studied. Thermal annealing of irradiated films in the temperature range 425°C to 475°C results in large increases in the electron mobility that approach the values predicted for singly-ionized donor defect scattering. It is suggested that the radiation-induced donor defects are stable, singly-charged nitrogen vacancies, and triply-charged, relaxed indium vacancy complexes that are removed by the annealing.

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Acknowledgments

This work is supported by the Director, Office of Science, Office of Basic Energy Sciences, Division of Materials Sciences and Engineering, of the U.S. Department of Energy under Contract No. DE-AC02-05CH11231. The work at Cornell University is supported by ONR under contract No. N000149910936. One of the authors (REJ) thanks the U.S. Department of Defense for current support and the National Science Foundation for previous support in the form of graduate student fellowships.

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Jones, R., van Genuchten, H., Li, S. et al. Electron Transport Properties of InN. MRS Online Proceedings Library 892, 606 (2005). https://doi.org/10.1557/PROC-0892-FF06-06

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