Polarity dependence of In-rich InGaN ternary alloys and InN/InGaN MQWs

Abstract

In-rich InGaN films (XIn>0.5) and InN/InGaN multi-quantum wells were grown on Ga- and N-polarity GaN templates by radio-frequency plasma-assisted molecular beam epitaxy. The In-polarity InGaN films grown at 450°C showed superior crystalline quality and smoother surface morphology compared to the N-polarity samples, which were grown at 500~550°C. By using the In-polarity In0.7Ga0.3N as a barrier layer, the InN/InGaN multi-quantum wells were successfully fabricated on the III-element polarity GaN templates at 450°C. Fine periodic structures and strong photoluminescence emission around optical communication wavelength were obtained from the In-polarity MQWs. These results indicate that high quality InGaN films and the InN/InGaN MQWs can be obtained in the In-polarity growth regime in spite of its lower growth temperature.

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Che, S.B., Shinada, T., Mizuno, T. et al. Polarity dependence of In-rich InGaN ternary alloys and InN/InGaN MQWs. MRS Online Proceedings Library 892, 603 (2005). https://doi.org/10.1557/PROC-0892-FF06-03

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