Scanning Tunneling Microscopy Study of Cr-doped GaN Surface Grown by RF Plasma Molecular Beam Epitaxy

Abstract

Cr doped GaN was grown by rf N-plasma molecular beam epitaxy on sapphire(0001) at a sample temperature of 700 °C. Cr/Ga flux ratio was set to a value from 5% to 20%. Subsequently, scanning tunneling microscopy was performed on these surfaces. Cr incorporates on the GaN surface at 700 °C at a Cr concentration of 5% and less. By increasing the Cr/Ga flux ratio to 20% in CrGaN, linear nano structures were formed on the surface, which were not observed on the bare GaN surface. The RHEED and STM studies reveal that Cr atoms form 3×3 reconstruction when 0.1 ML of Cr was deposited at room temperature on 1×1 adlayer of Ga on GaN(000-1). Cr substitutes Ga on the surface when deposited at 700 °C on the MBE grown GaN(000-1) surface for all the experiments which we have performed provided the Cr concentration is low (~5%).

This is a preview of subscription content, access via your institution.

References

  1. 1.

    K. Sato, H. Katayama-Yoshida, Semicond. Sci. Technol. 17, 367 (2002).

    CAS  Article  Google Scholar 

  2. 2.

    J. S. Lee, J. D. Lim, Z. G. Khim, and Y. D. Park, J. Appl. Phys. 93, 4512 (2003).

    CAS  Article  Google Scholar 

  3. 3.

    S. E. Park, H. J. Lee, Y. C. Cho, and S. Y. Jeong, Appl. Phys. Lett. 80, 4187 (2002).

    CAS  Article  Google Scholar 

  4. 4.

    M. Hashimoto, Y. K. Zhou, M. Kanamura, H. Katayama-Yoshida, and H. Asahi, J. Crystal Growth 251, 327 (2003).

    CAS  Article  Google Scholar 

  5. 5.

    H. Asahi, Y. K. Zhou, M. Hashimoto, M. S. Kim, X. J. Li, S. Emura, and S. Hasegawa, and J. Phys: Condens. Matter 16, S5555 (2004).

    CAS  Google Scholar 

  6. 6.

    Y. K. Zhou, M. Hashimoto, M. Kanamura, and H. Asahi, J. Supercond. Incorporating Novel Magnetism 16, 37 (2003).

    CAS  Google Scholar 

  7. 7.

    M. B. Haider, H. Al-Brithen, R. Yang, C. Constantin, D. Ingram, and A. R. Smith, G. Caruntu, and C. J. O'Connor, J. Crystal Growth 285, 300 (2005).

    CAS  Article  Google Scholar 

  8. 8.

    A. R. Smith, R. M. Feenstra, D. W. Greve, J. Neugebauer, and J. E. Northrup, Phys. Rev. Lett. 79, 3934 (1997).

    CAS  Article  Google Scholar 

  9. 9.

    A. R. Smith, R. M. Feenstra, D. W. Greve, M. S. Shin, M. Skowronski, J. Neugebauer, and J. E. Northrup, J. Vac. Sci. Technol. B 16, 2242 (1998).

    CAS  Article  Google Scholar 

  10. 10.

    A. R. Smith, R. M. Feenstra, D. W. Greve, J. Neugebauer, and J. E. Northrup, Appl. Phys. A 66, S947 (1998).

    CAS  Article  Google Scholar 

  11. 11.

    H. X. Liu, S. Y. Wu, R. K. Singh, L. Gu, D. J. Smith, N. Newman, N. R. Dilley, L. Montes, and M. B. Simmonds Appl. Phys. Lett. 85, 4076 (2004).

    CAS  Article  Google Scholar 

Download references

Acknowledgements

This material is based upon work supported by the National Science Foundation under grant Nos. 9983816 and 0304314.

Author information

Affiliations

Authors

Corresponding author

Correspondence to Arthur R. Smith.

Rights and permissions

Reprints and Permissions

About this article

Verify currency and authenticity via CrossMark

Cite this article

Haider, M.B., Yang, R., Al-Brithen, H. et al. Scanning Tunneling Microscopy Study of Cr-doped GaN Surface Grown by RF Plasma Molecular Beam Epitaxy. MRS Online Proceedings Library 892, 403 (2005). https://doi.org/10.1557/PROC-0892-FF04-03

Download citation

Keywords

  • 75.50.Pp
  • 81.15.Hi
  • 61.10.Nz
  • 61.14.Hg