Cr doped GaN was grown by rf N-plasma molecular beam epitaxy on sapphire(0001) at a sample temperature of 700 °C. Cr/Ga flux ratio was set to a value from 5% to 20%. Subsequently, scanning tunneling microscopy was performed on these surfaces. Cr incorporates on the GaN surface at 700 °C at a Cr concentration of 5% and less. By increasing the Cr/Ga flux ratio to 20% in CrGaN, linear nano structures were formed on the surface, which were not observed on the bare GaN surface. The RHEED and STM studies reveal that Cr atoms form 3×3 reconstruction when 0.1 ML of Cr was deposited at room temperature on 1×1 adlayer of Ga on GaN(000-1). Cr substitutes Ga on the surface when deposited at 700 °C on the MBE grown GaN(000-1) surface for all the experiments which we have performed provided the Cr concentration is low (~5%).
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K. Sato, H. Katayama-Yoshida, Semicond. Sci. Technol. 17, 367 (2002).
J. S. Lee, J. D. Lim, Z. G. Khim, and Y. D. Park, J. Appl. Phys. 93, 4512 (2003).
S. E. Park, H. J. Lee, Y. C. Cho, and S. Y. Jeong, Appl. Phys. Lett. 80, 4187 (2002).
M. Hashimoto, Y. K. Zhou, M. Kanamura, H. Katayama-Yoshida, and H. Asahi, J. Crystal Growth 251, 327 (2003).
H. Asahi, Y. K. Zhou, M. Hashimoto, M. S. Kim, X. J. Li, S. Emura, and S. Hasegawa, and J. Phys: Condens. Matter 16, S5555 (2004).
Y. K. Zhou, M. Hashimoto, M. Kanamura, and H. Asahi, J. Supercond. Incorporating Novel Magnetism 16, 37 (2003).
M. B. Haider, H. Al-Brithen, R. Yang, C. Constantin, D. Ingram, and A. R. Smith, G. Caruntu, and C. J. O'Connor, J. Crystal Growth 285, 300 (2005).
A. R. Smith, R. M. Feenstra, D. W. Greve, J. Neugebauer, and J. E. Northrup, Phys. Rev. Lett. 79, 3934 (1997).
A. R. Smith, R. M. Feenstra, D. W. Greve, M. S. Shin, M. Skowronski, J. Neugebauer, and J. E. Northrup, J. Vac. Sci. Technol. B 16, 2242 (1998).
A. R. Smith, R. M. Feenstra, D. W. Greve, J. Neugebauer, and J. E. Northrup, Appl. Phys. A 66, S947 (1998).
H. X. Liu, S. Y. Wu, R. K. Singh, L. Gu, D. J. Smith, N. Newman, N. R. Dilley, L. Montes, and M. B. Simmonds Appl. Phys. Lett. 85, 4076 (2004).
This material is based upon work supported by the National Science Foundation under grant Nos. 9983816 and 0304314.
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Haider, M.B., Yang, R., Al-Brithen, H. et al. Scanning Tunneling Microscopy Study of Cr-doped GaN Surface Grown by RF Plasma Molecular Beam Epitaxy. MRS Online Proceedings Library 892, 403 (2005). https://doi.org/10.1557/PROC-0892-FF04-03