Analysis and comparison of semiconductor materials processed at IR vs. UV laser wavelengths for DRAM yield enhancement applications

Abstract

This report demonstrates the effects of IR and UV laser energy on common semiconductor layer stack materials used for DRAM laser fuses. By moving from IR to UV wavelengths it is possible to significantly shrink the laser spot diameter from ∼1.6 μm to 0.8 μm. Effects and concerns for the absorption of UV energy by Si, SiO2, nitrides, and oxynitrides are also presented.

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Correspondence to E. Hooper Andy.

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Andy, E.H., Kawasaki, A., Kirby, P. et al. Analysis and comparison of semiconductor materials processed at IR vs. UV laser wavelengths for DRAM yield enhancement applications. MRS Online Proceedings Library 890, 804 (2005). https://doi.org/10.1557/PROC-0890-Y08-04

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