Analysis and comparison of semiconductor materials processed at IR vs. UV laser wavelengths for DRAM yield enhancement applications

MRS Online Proceedings Library volume 890, Article number: 804 (2005) Cite this article

Abstract

This report demonstrates the effects of IR and UV laser energy on common semiconductor layer stack materials used for DRAM laser fuses. By moving from IR to UV wavelengths it is possible to significantly shrink the laser spot diameter from ∼1.6 μm to 0.8 μm. Effects and concerns for the absorption of UV energy by Si, SiO2, nitrides, and oxynitrides are also presented.

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References

  1. 1.

    L.M. Scarfone and J.D. Chlipala, J. Mater. Res., 1, 368, (1986).

    CAS  Article  Google Scholar 

  2. 2.

    J. F. Ready, D. Smart, and E. J. Swenson, in Handbook of Laser Materials Processing, edited by D.F. Farson and J. F. Ready (Laser Institute of America / Magnolia Publishing Inc., Orlando, FL, 2001).

    Google Scholar 

  3. 3.

    Y. Sun, Proc. IEEE, 90, 1627–1636 (2002).

    Article  Google Scholar 

  4. 4.

    Y. Sun, Ph.D. dissertation, Oregon Graduate Institute of Science and Technology, 1997.

  5. 5.

    B. Keeth and R. J. Baker, DRAM Circuit Design: a Tutorial (IEEE Press, Piscataway, NJ 2001).

    Google Scholar 

  6. 6.

    W. W. Duley, in UV Lasers: effects and applications in materials science, (Cambridge University Press, New York, NY, 1996).

    Google Scholar 

  7. 7.

    J-Y. Natoli, L. Gallais, B. Bertussi, A. During, M. Commandré, Opt. Express, 11, 824–829 (2003).

    CAS  Article  Google Scholar 

Download references

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Affiliations

  1. Electro Scientific Industries, 13900 NW Science Park Drive, 97229-5497, Portland, OR, USA

    E. Hooper Andy, Allen Kawasaki, Paul Kirby, Robert Hainsey, Jeongho Bang, Kyeongseon Shin & Ki Sang Kang

  2. Samsung Electronics Co., Ltd., San#24, Nongseo-Ri, Kiheung-Eup, Yongin-City, Kyungki-Do, Korea

    Kungu Lee

Authors
  1. E. Hooper Andy
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  2. Allen Kawasaki
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  3. Paul Kirby
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  4. Robert Hainsey
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  5. Jeongho Bang
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  6. Kyeongseon Shin
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  7. Ki Sang Kang
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  8. Kungu Lee
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Correspondence to E. Hooper Andy.

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Andy, E.H., Kawasaki, A., Kirby, P. et al. Analysis and comparison of semiconductor materials processed at IR vs. UV laser wavelengths for DRAM yield enhancement applications. MRS Online Proceedings Library 890, 804 (2005). https://doi.org/10.1557/PROC-0890-Y08-04

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