Abstract
Since the first reports of charge storage in the gate dielectrics of organic semiconductors, several groups have proposed charge-storing dielectrics that become polarized through varied mechanisms, and have offered various explanations for observed charge storage phenomena. These groups were concerned either with nonvolatile memories as an application, or with controlling hysteresis in conventional OFETs. This manuscript describes measurements of surface charging and OFET threshold voltage shift for a case where charge is clearly stored in the dielectric. The magnitude and stability of the charge storage depend on the hydrophobicity of the dielectric and the charge deposition process. We focus on SiO2 as the dielectric and use a thiophene oligomer or hexadecafluoro-copper phthalocyanineas semiconductor. In one case, the phthalocyanine was inverted from electron- to hole-carrying, enabling a complementary device to be made from a single semiconductor.
Similar content being viewed by others
References
C.R. Kagan & P. Andry Thin-Film Transistors (Marcel Dekker, New York, 2003).
C.D. Dimitrakopoulos & P.R.L. Malenfant Organic thin film transistors for large area electronics. Adv. Mater. 14, 99–117 (2002).
A.S. Sedra & K.C. Smith Microelectronic Circuits (Oxford University Press, London, 2003).
A. Dodabalapur, H.E. Katz, L. Torsi & R. C. Haddon Organic heterostructure field-effect transistors. Science 269, 1560–1562 (1995).
M. Ahles, R. Schmechel & H. Seggern Complementary inverter based on interface doped pentacene. Appl. Phys. Lett. 87, 113505 (2005).
M.-H. Yoon, S.A. DiBenedetto, A. Facchetti & T.J. Marks Organic thin-film transistors based on carbonyl-functionalized quaterthiophenes: high mobility N-channel semiconductors and ambipolar transport. J. Am. Chem. Soc. 127, 1348–1349 (2005).
E.J. Meijer, D.M. De Leeuw, S. Setayesh, E. Van Veenendaal, B.-H. Huisman, P.W.M. Blom, J.C. Hummelen, U. Scherf & T.M. Klapwijk Solution-processed ambipolar organic field-effect transistors and inverters. Nat. Mater. 2, 678–682 (2003).
L.-L. Chua, J. Zaumsell, J.-F. Chang, E.C.-W. Ou, P.K.-H. Ho, H. Sirringhaus & R.H. Friend General observation of n-type field-effect behavior in organic semiconductors. Nature 434, 194–199 (2005).
S.M. Sze Physics of Semiconductor Devices (Wiley, New York, 1981).
G.M. Sessler Electrets 3rd Edition (Laplacian Press, CA, 1999), vol. 1.
R. Kressmann, G.M. Sessler & P. Günther Space-charge electrets. in Electrets, 3rd Edition (ed. R. Gerhard-Mulhaupt ) (Laplacian Press, CA, 1999), vol. 2, ch. 9.
Z. Bao, A.J. Lovinger & J. Brown New air-stable n-channel organic thin film transistors. J. Am. Chem. Soc. 120, 207–208 (1998).
H.E. Katz, X.M. Hong, A. Dodabalapur & R. Sarpeshkar Organic field-effect transistors with polarizable gate insulators. J. Appl. Phys. 91, 1572–1576 (2002).
M. Mushrush, A. Facchetti, M. Lefenfeld, H.E. Katz, T.J. Marks Easily processable phenylene-thiophene-based organic field-effect transistors and solutionfabricated nonvolatile transistor memory elements. J. Am. Chem. Soc. 125, 9414–9423 (2003)
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
Katz, H.E., Huang, C. & West, J. Bulk and Interface Charging Mechanisms in Organic Semiconductor-Gate Dielectric Bilayers. MRS Online Proceedings Library 889, 802 (2005). https://doi.org/10.1557/PROC-0889-W08-02
Received:
Accepted:
Published:
DOI: https://doi.org/10.1557/PROC-0889-W08-02