Charge transfer of n-type GaN photoelectrolysis in HCl solution for H2 gas generation at a counterelectrode

MRS Online Proceedings Library volume 885, Article number: 1104 (2005) Cite this article

Abstract

In order to clarify the charge transfer characteristics for H2 generation, photoelectrochemical properties of n-type GaN in HCl solution were investigated. The flatband potential under illumination and the onset voltages of photocurrent located approximately the same position. From the result, we concluded that the positively charged surface by hole capture is the main reason of the extra voltage requirement for H2 generation. The carrier concentration in n-type GaN also affects the photocurrent.

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Affiliations

  1. Nakamura Inhomogeneous Crystal Project, Exploratory Research for Advanced Technology, Japan Science and Technology Agency, 1-3 Kagurazaka, 162-8601, Shinjyuku, Tokyo, Japan

    Katsushi Fujii & Kazuhiro Ohkawa

  2. Department of Applied Physics, Tokyo University of Science, 1-3 Kagurazaka, 162-8601, Shinjyuku, Tokyo, Japan

    Masato Ono, Takashi Ito & Kazuhiro Ohkawa

Authors
  1. Katsushi Fujii
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  2. Masato Ono
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  3. Takashi Ito
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  4. Kazuhiro Ohkawa
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Correspondence to Katsushi Fujii.

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Fujii, K., Ono, M., Ito, T. et al. Charge transfer of n-type GaN photoelectrolysis in HCl solution for H2 gas generation at a counterelectrode. MRS Online Proceedings Library 885, 1104 (2005). https://doi.org/10.1557/PROC-0885-A11-04

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