Ruthenium-iridium oxide films were prepared in an horizontal hot-wall MOCVD apparatus and their electrocatalytic activity was investigated in the oxygen evolution reaction. Metal-acetylacetonates were used as precursors and oxygen as the reactant gas. Appropriate deposition conditions for obtaining bi-metallic oxide films were found to be deposition temperature (Tdep), 673 K and total pressure (Ptot), 133.32 Pa. X-Ray diffraction (XRD), Rietveld refinement and scanning electron microscopy (SEM) results demonstrated that the MOCVD method is a viable alternative to grow RuxIr1−xO2 films consisted of a single-phase with a very homogeneous distribution of elements. The electrocatalytic activity of the RuxIr1−xO2 films was investigated by cyclic voltammetry and anodic polarization curves in a 0.5 M H2SO4 solution at room temperature. The single-phase Ru0.4Ir0.6O2 films showed to be very promising for the oxygen evolution reaction due to a synergistic effect.
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Figueroa Torres, M.Z., Hesiquio Garduño, M., Arce Estrada, E.M. et al. Ruthenium-Iridium Oxide Films Prepared by MOCVD and their Electrocatalytic Activity for Oxygen Evolution. MRS Online Proceedings Library 885, 913 (2005). https://doi.org/10.1557/PROC-0885-A09-13