The Pb(ZrxTi1–x)O3(PZT) films sputter deposited on LaNiO3(LNO)/Si(100) substrates were recrystallized to highly (l00)-oriented perovskite structure by high oxygen-pressure processing (HOPP) and high argon-pressure processing (HAPP), which were performed at a relatively low temperature 400 °C compared to the normally required temperature condition above 600 °C. Ferroelectricity of PZT films was investigated by a measurement of P-E hysteresis loop. The P-E hysteresis loops of the PZT(52/48) and PZT(30/70) films after HOPP showed better squareness and larger remnant polarization than those of as-sputtered ones prepared at a high temperature of 600 °C. Although the PZT films with HAPP also showed a high (l00)-oriented perovskite structure and obvious ferroelectricity, their P-E loops suggested relatively poor ferroelectricity compared to those of the PZT films with HOPP. This means that a further optimization for HAPP is needed to improve ferroelectricity of PZT films.
This is a preview of subscription content, access via your institution.
Buy single article
Instant access to the full article PDF.
Tax calculation will be finalised during checkout.
Subscribe to journal
Immediate online access to all issues from 2019. Subscription will auto renew annually.
Tax calculation will be finalised during checkout.
J.F. Scott, C.A. Araujo: Ferroelectric memories. Science 246, 1400 1989
R. Ramesh: Thin Film Ferroelectric Materials and Devices Kluwer Boston 1997
P. Muralt, A. Kholkin, M. Kohli, T. Maeder: Piezoelectric actuation of PZT thin-film diaphragms at static and resonant conditions. Sens. Actuators, A 53, 398 1996
S.H. Lee, M.S. Jeon, K.I. Hong, J.W. Lee, C.K. Kim, D.K. Choi: Cantilever type lead zirconate titanate microactuator utilizing ruthenium oxide. Jpn. J. Appl. Phys., Part 1 39, 2859 2000
C.R. Cho, L.F. Francis, M.S. Jang: Piezoelectric properties and acoustic wave detection of Pb(Zr0.52Ti0.48)O3 thin films for microelectromechanical system sensor. Jpn. J. Appl. Phys., Part 2 38, L751 1999
J.G.E. Gardeniers, A.G.B.J. Verholen, N.R. Tas, M. Elwenspoek: Direct measurement of piezoelectric properties of sol-gel PZT films. J. Korean Phys. Soc. 32, S1573 1998
I. Kanno, S. Fujii, T. Kamada, R. Takayama: Piezoelectric characteristics of c-axis oriented Pb(Zr, Ti)O3 thin films. J. Korean Phys. Soc. 32, S1481 1998
M. Yamamoto, I. Kanno, S. Aoki: Profile measurement of high aspect ratio micro-structures using a tungsten carbide micro-cantilever coated with PZT thin films in Proceedings of the IEEE International Conference on Micro Electro Mech. Syst. (MEMS 2000), Miyazaki, Japan, 2000 217
S.R.J. Brueck, R.A. Myers: Applications of nonlinear optical thin films in Epitaxial Oxide Thin Films and Heterostructures, edited by D.K. Fork, J.M. Phillips, R. Ramesh, and R.M. Wolf (Mater. Res. Soc. Symp. Proc. 341, Pittsburgh, PA, 1994), p. 243
R.E. Newnham, G.R. Ruschau: Smart electroceramics. J. Am. Ceram. Soc. 74, 463 1991
D.Q. Xiao, J.G. Zhu, Z.H. Qian: Ferroelectric integrated thin films. Ferroelectrics 151, 27 1994
C. Van Hoof, K. Baert, A. Witvrouw: The best materials for tiny, clever sensors. Science 306, 986 2004
Y.J. Song, Y.F. Zhu, S.B. Desu: Low temperature fabrication and properties of sol-gel derived (111) oriented Pb(Zr1–xTix)O3 thin films. Appl. Phys. Lett. 72, 2686 1998
X.J. Meng, J.G. Cheng, B. Li, S.L. Guo, H.J. Ye, J.H. Chu: Low-temperature preparation of highly (111) oriented PZT thin films by a modified sol-gel technique. J. Cryst. Growth 208, 541 2000
H-C. Pan, C-C. Chou, H-L. Tsai: Low-temperature processing of sol-gel derived La0.5Sr0.5MnO3 buffer electrode and PbZr0.52Ti0.48O3 films using CO2 laser annealing. Appl. Phys. Lett. 83, 3156 2003
Z.J. Wang, H. Kokawa, H. Takizawa, M. Ichiki, R. Maeda: Low-temperature growth of high-quality lead zirconate titanate thin films by 28 GHz microwave irradiation. Appl. Phys. Lett. 86, 212903 2005
M. Lourdes Calzada, I. Bretos, R. Jiménez, H. Guillon, L. Pardo: Low-temperature processing of ferrolelectric thin films compatible with silicon integrated circuit technology. Adv. Mater. 16(18), 1620 2004
F. Ye, K. Lu: Crystallization kinetics of amorphous solids under pressure. Phys. Rev. B 60(10), 7018 1999
J.D. Gunton: Homogeneous nucleation. J. Stat. Phys. 95(5/6), 903 1999
M.L. Calzada, I. Bretos, R. Jiménez, H. Guillon, J. Ricote, L. Pardo: Low-temperature ultraviolet sol-gel photoannealing processing of multifunctional lead-titanate-based thin films. J. Mater. Res. 22(7), 1824 2007
I. Bretos, R. Jimenez, E. Rodriguez-Castellon, J. Garcia-Lopez, M.L. Calzada: Heterostructure and compositional depth profile of low-temperature processed lead titanate-based ferroelectric thin films prepared by photochemical solution deposition. Chem. Mater. 20(4), 1443 2008
X.D. Zhang, X.J. Meng, J.L. Sun, T. Lin, J.H. Chu: Investigation of room temperature electrical resistivities of LaNiO3–δthin films deposited by rf magnetron sputtering and high oxygen-pressure processing. J. Vac. Sci. Technol., A 24(4), 914 2006
X.D. Zhang, X.J. Meng, J.L. Sun, T. Lin, J.H. Chu, D.Y. Kwon, C.W. Kim, B.G. Kim: Preparation of LaNiO3 thin films with very low room-temperature electrical resistivity by room temperature sputtering and high oxygen-pressure processing. Thin Solid Films 516, 919 2008
N. Floquet, J. Hector, P. Gaucher: Correlation between structure, microstructure, and ferroelectric properties of PbZr0.2Ti0.8O3 integrated film: Influence of the sol-gel process and the substrate. J. Appl. Phys. 84, 3815 1998
V. Iota, C.S. Yoo, H. Cynn: Quartzlike carbon dioxide: An optically nonlinear extended solid at high pressures and temperatures. Science 283, 1510 1999
H. Yamauchi, M. Karppinen: Application of high-pressure techniques: Stabilization and oxidation-state control of novel superconductive and related multi-layered copper oxides. Supercond. Sci. Technol. 13, R33 2000
J. Karpinski, G.I. Meijer, H. Schwer, R. Molinski, E. Kopnin, K. Conder, M. Angst, J. Jun, S. Kazakov, A. Wisniewski, R. Puzniak, J. Hofer, V. Alyoshin, A. Sin: High-pressure synthesis, crystal growth, phase diagrams, structural and magnetic properties of Y2Ba4CunO2n+x, HgBa2Can−1CunO2n+2+δ and quasi-one-dimensional cuprates. Supercond. Sci. Technol. 12, R153 1999
R.F. Davis: Diamond Films and Coatings: Development, Properties, and Applications William Andrew Inc. 1993
M. Guthrie, C.A. Tulk, C.J. Benmore, J. Xu, J.L. Yarger, D.D. Klug, J.S. Tse, H-K. Mao, R.J. Hemley: Formation and structure of a dense octahedral glass. Phys. Rev. Lett. 93, 115502 2004
J. Rouquette, J. Haines, V. Bornand, M. Pintard, Ph. Papet, R. Astier, J.M. Léger, F. Gorelli: Transition to a cubic phase with symmetry-breaking disorder in PbZr0.52Ti0.48O3 at high pressure. Phys. Rev. B 65, 214102 2002
M.T. Escote, F.M. Pontes, E.R. Leite, E. Longo, R.F. Jardim, P.S. Pizani: High oxygen-pressure annealing effects on the ferroelectric and structural properties of PbZr0.3Ti0.7O3 thin films. J. Appl. Phys. 96, 2186 2004
C-H. Lu, W-J. Hwang, Y-C. Sun: Ferroelectric lead zirconate titanate thin films synthesized via a high-pressure crystallization process. Jpn. J. Appl. Phys. 41, 6674 2002
X.D. Zhang, X.J. Meng, J.L. Sun, T. Lin, J.H. Chu: Low-temperature preparation of highly (100)-oriented Pb(ZrxTi1–x)O3 thin film by high oxygen-pressure processing. Appl. Phys. Lett. 86, 252902 2005
D.J. You, W.W. Jung, S.K. Choi, Y. Cho: Domain structure in a micron-sized PbZr1–xTixO3 single crystal on a Ti substrate fabricated by hydrothermal synthesis. Appl. Phys. Lett. 84(17), 3346 2004
S. Aggarwal, S.R. Perusse, C.W. Tipton, R. Ramesh, H.D. Drew, T. Venkatesan, D.B. Romero, V.B. Podobedov, A. Weber: Effect of hydrogen on Pb(Zr,Ti)O3-based ferroelectric capacitors. Appl. Phys. Lett. 73(14), 1973 1998
The authors gratefully acknowledge the support of the National Natural Science Foundation of China (Grant Nos. 60221502 and 60371040), The Ministry of Science and Technology (MOST) of the People’s Republic of China (Grant No. 2007CB924900), Shanghai R&D Foundation for Applied Materials (Grant No. 0316), and the Science and Technology Commission of Shanghai Municipality Nos. 03JC14076 and 07JC14018. We also wish to thank Prof. N. Dai, Prof. G.S. Wang, Dr. X.H. Zhou, and Dr. L.Z. Sun for helpful discussions, Dr. Y.W. Li and Dr. F.W. Shi for their assistance in data processing, and Dr. T.X. Li for the AFM observation. X.D. Zhang and J. Dho acknowledge the support from BK21 project and Korea Science and Engineering Foundation (KOSEF) (R01-2006-000-10369-0) in Korea.
About this article
Cite this article
Zhang, X., Meng, X., Sun, J. et al. The alternative route of low-temperature preparation of highly oriented lead zirconate titanate thin films by high gas-pressure processing. Journal of Materials Research 23, 2846–2853 (2008). https://doi.org/10.1557/JMR.2008.0365