Skip to main content
SpringerLink
Log in

Phase identification from electronic structures by Auger electron spectroscopy

  • Published:
Journal of Materials Research Aims and scope Submit manuscript

Abstract

A technique of phase identification from the characteristics of electronic structures is established by Auger electron spectroscopy. GaN epilayers in wurtzite and zinc-blende polytypes are used for practical investigations. Auger spectra show phase-dependent energetic shifts and peak intensity variations. Simulation of theoretical spectra reveals the substantial correlation of the Auger line shape with the bonding electronic states. This approach demonstrates the correspondence between electronic structure and atomic structure and hence provides criteria for phase identification.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

FIG. 1
FIG. 2
FIG. 3

Similar content being viewed by others

References

  1. J.H. Kim P.H. Holloway: Wurtzite to zinc-blende phase transition in gallium nitride thin films. Appl. Phys. Lett. 84, 711 2004

    Article  CAS  Google Scholar 

  2. M. Katsikint, E.C. Paloura T.D. Moustakas: Application of near-edge x-ray absorption fine structure for the identification of hexagonal and cubic polytypes in epitaxial GaN. Appl. Phys. Lett. 69, 4207 1996

    Google Scholar 

  3. X. Huang Q. Liu: Determination of crystallographic and macroscopic orientation of planar structures in TEM. Ultramicroscopy 74, 123 1998

    Article  CAS  Google Scholar 

  4. D. Briggs M.P. Seah Practical Surface Analysis 2nd ed. John Wiley & Sons Chichester, UK 1990 102

    Google Scholar 

  5. Z. Kovacs, L. Kover, D. Varga, P. Weighman, J. Palinkas H. Adachi: Core-valence (KLV, KVV, LVV) Auger and high resolution valence band XPS spectra of aluminum: a comparison with the results of cluster MO calculations. J. Electron Spectrosc. Relat. Phenom. 72, 157 1995

    Article  CAS  Google Scholar 

  6. D. Cai, F.C. Xu J.Y. Kang: High-spatial-resolution strain measurements by Auger electron spectroscopy in epitaxial-lateral-overgrowth GaN. Appl. Phys. Lett. 86, 211917 2005

    Article  Google Scholar 

  7. V. Cimalla, M. Niebelschütz, V. Lebedev, O. Ambacher, M. Himmerlich, S. Krischok, J.A. Schaefer, H. Lu W.J. Schaff: Surface band bending at nominally undoped and Mg-doped InN by Auger electron spectroscopy. Phys. Status Solidi A 203, 59 2006

    Article  CAS  Google Scholar 

  8. S.P. Svensson, P.O. Nilsson T.G. Andersson: Interpretation of low-energy Auger spectra from AlAs and GaAs(001): Applications to surface preparation. Phys. Rev. B 31, 5272 1988

    Article  Google Scholar 

  9. P.J. Feibelman, E.J. McGuire K.C. Pandy: Theory of valence-band Auger line shapes: Ideal Si(111),(100), and(110). Phys. Rev. B 15, 2202 1977

    Article  CAS  Google Scholar 

  10. E.K. Chang E.L. Shirley: Ab initio calculation of KLV Auger spectra in Si. Phys. Rev. B 66, 035106 2002

    Article  Google Scholar 

  11. C.Y. Yeh, Z.W. Lu, S. Froyen A. Zunger: Predictions and systematizations of the zinc-blende–wurtzite structural energies in binary octet compounds. Phys. Rev. B 45, 12130 1992

    Article  CAS  Google Scholar 

  12. S.H. Wei S.B. Zhang: Structure stability and carrier localization in CdX (X = S, Se, Te) semiconductors. Phys. Rev. B 62, 6944 2000

    Article  CAS  Google Scholar 

  13. C.C. Yang, M.C. Wu, C.H. Lee G.C. Chi: X-ray diffraction characterization of epitaxial zinc-blende GaN films on a miscut GaAs(001) substrates using the hydride vapor-phase epitaxy method. J. Cryst. Growth 206, 8 1999

    Article  CAS  Google Scholar 

  14. P. Hohenberg W. Khon: Inhomogeneous electron gas. Phys. Rev. 136, B864 1964

    Article  Google Scholar 

  15. W. Khon L.J. Sham: Self-consistent equations including exchange and correlation effects. Phys. Rev. 140, A1133 1965

    Article  Google Scholar 

  16. D. Cai, J.Y. Kang Z.Z. Zhu: Layer structures under in-plane compressive strains in AlxGa1-xN/AlN interfaces. Phys. Rev. B 68, 073305 2003

    Article  Google Scholar 

  17. J.C. Li J.Y. Kang: Polarization effect on p-type doping efficiency in Mg-Si codoped wurtzite GaN from first-principles calculations. Phys. Rev. B 71, 035216 2005

    Article  Google Scholar 

  18. D.E. Ramaker, F.L. Hutson, N.H. Turner W.N. Mei: Charge transfer, polarization, and relaxation effects on the Auger line shapes of Si. Phys. Rev. B 33, 2574 1986

    Article  CAS  Google Scholar 

  19. P.G. Luire J.M. Wilson: The diamond surface II. Secondary electron emission. Surf. Sci. 65, 476 1977

    Article  Google Scholar 

  20. T. Hidaka: Theory of the piezoelectricity of zinc-blende-type and wurtzite-type crystals. Phys. Rev. B 5, 4030 1972

    Article  Google Scholar 

Download references

Acknowledgments

This work was partly supported by the “863” program (2006AA03A110), National Basic Research program (A1420060155), the National Nature Science Foundation (60776066), and Science & Technology Program of Fujian (2007H0033) and Xiamen (3502Z20063001) of China.

Author information

Authors and Affiliations

  1. Department of Physics, Semiconductor Photonics Research Center, Xiamen University, Xiamen, 361005, China

    Fuchun Xu, Duanjun Cai & Junyong Kang

Authors
  1. Fuchun Xu
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. Duanjun Cai
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. Junyong Kang
    View author publications

    You can also search for this author in PubMed Google Scholar

Corresponding author

Correspondence to Junyong Kang.

Rights and permissions

Reprints and permissions

About this article

Cite this article

Xu, F., Cai, D. & Kang, J. Phase identification from electronic structures by Auger electron spectroscopy. Journal of Materials Research 23, 83–86 (2008). https://doi.org/10.1557/JMR.2008.0016

Download citation

  • Received:

  • Accepted:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1557/JMR.2008.0016

Search

Navigation