A wurtzite nitrogen-doped MgZnO (MgZnO:N) film was grown by plasma-assisted molecular-beam epitaxy (PAMBE) on c-plane sapphire using radical NO as oxygen source and nitrogen dopant. The as-grown film shows n-type conduction at room temperature, but transforms into p-type conduction after annealed. Photoluminescence (PL) spectrum measured at 80 K is dominated by neutral donor-bound exciton emission (D0X) located at 3.522 eV for the n-type MgZnO:N film, but by neutral acceptor-bound exciton emission (A0X) located at 3.515 eV for the p-type MgZnO:N film. By fitting exciton emission intensity of temperature-dependent PL spectra, the binding energies of the D0X and A0X were estimated to be 32 and 43 meV, respectively. Based on the energy shift of exciton emission, the band gap of the MgZnO:N film is estimated to be 3.613 eV, which is 179 meV larger than that of ZnO. Using the Haynes rule, the acceptor energy level of the MgZnO:N film was evaluated to be about 176 meV above the valence band.
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Z.K. Tang, G.K.L. Wong, P. Yu, M. Kawasaki, A. Ohtomo, H. Koinuma Y. Segawa: Room-temperature ultraviolet laser emission from self-assembled ZnO microcrystallite thin films. Appl. Phys. Lett. 72, 3270 1998
H. Cao, J.Y. Wu, H.C. Ong, J.Y. Dai R.P.H. Chang: Second harmonic generation in laser ablated zinc oxide thin films. Appl. Phys. Lett. 73, 572 1998
D.C. Look, D.C. Reynolds, C.W. Litton, R.L. Jones, D.B. Eason G. Cantwell: Characterization of homoepitaxial p-type ZnO grown by molecular beam epitaxy. Appl. Phys. Lett. 81, 1830 2002
H.W. Liang, Y.M. Lu, D.Z. Shen, Y.C. Liu, J.F. Yan, C.X. Shan, B.H. Li, Z.Z. Zhang, J.Y. Zhang X.W. Fan: P-type ZnO thin films prepared by plasma molecular beam epitaxy using radical NO. Phys. Status Solidi A 202, 1060 2005
K. Kyoung-Kook, K. Hyun-Sik, H. Dae-Kue, L. Jae-Hong P. Seong-Ju: Realization of p-type ZnO thin films via phosphorus doping and thermal activation of the dopant. Appl. Phys. Lett. 83, 63 2003
T. Yamamoto, H. Katayama-Yoshida: Solution using a codoping method to unipolarity for the fabrication of p-type ZnO. Jpn. J. Appl. Phys. Part 2 38, L166 1999
A. Tsukazaki, T. Onuma, M. Ohtani, T. Makino, M. Sumiya, K. Ohtani, S.F. Chichibu, S. Fuke, Y. Segawa, H. Ohno, H. Koinuma M. Kawasaki: Repeated temperature modulation epitaxy for p-type doping and light-emitting diode based on ZnO. Nat. Mater. 4, 42 2005
S.J. Jiao, Z.Z. Zhang, Y.M. Lu, D.Z. Shen, B. Yao, J.Y. Zhang, B.H. Li, D.X. Zhao, X.W. Fan Z.K. Tang: ZnO p-n junction light-emitting diodes fabricated on sapphire substrates. Appl. Phys. Lett. 88, 031911 2006
W. Liu, S.L. Gu, J.D. Ye, S.M. Zhu, S.M. Liu, X. Zhou, R. Zhang, Y. Hang C.L. Zhang: Blue-yellow ZnO homostructural light-emitting diode realized by metalorganic chemical vapor deposition technique. Appl. Phys. Lett. 88, 092101 2006
A. Ohtomo, M. Kawasaki, T. Koida, K. Masubuchi H. Koinuma: MgxZn1−xO as a II–VI widegap semiconductor alloy. Appl. Phys. Lett. 72, 2466 1998
S. Choopun, R.D. Vispute, W. Yang, R.P. Sharma, T. Venkatesan H. Shen: Realization of band gap above 5.0 eV in metastable cubic-phase MgxZn1−xO alloy films. Appl. Phys. Lett. 80, 1529 2002
Y.W. Heo, Y.W. Kwon, Y. Li, S.J. Pearton D.P. Norton: p-type behavior in phosphorus-doped (Zn,Mg)O device structures. Appl. Phys. Lett. 84, 3474 2004
X. Zhang, X.M. Li, T.L. Chen, C.Y. Zhang W.D. Yu: p-type conduction in wide-gap Zn1−xMgxO films grown by ultrasonic spray pyrolysis. Appl. Phys. Lett. 87, 092101 2005
Z.P. Wei, B. Yao, Z.Z. Zhang, Y.M. Lu, D.Z. Shen, B.H. Li, X.H. Wang, J.Y. Zhang, D.X. Zhao, X.W. Fan Z.K. Tang: Formation of p-type MgZnO by nitrogen doping. Appl. Phys. Lett. 89, 102104 2006
C-X. Wu, Y-M. Lu, D-Z. Shen, Z-P. Wei, Z-Z. Zhang, B-H. Li, J-Y. Zhang, Y-C. Liu X.W. Fan: Ultraviolet luminescence in Mg0.12Zn0.88O alloy films. Chin. Phys. Lett. 22, 2655 2005
X.T. Zhang, Y.C. Liu, Z.Z. Zhi, J.Y. Zhang, Y.M. Lu, D.Z. Shen, W. Xu, X.W. Fan X.G. Kong: Temperature dependence of excitonic luminescence from nanocrystalline ZnO films. J. Lumin. 99, 149 2002
D.C. Look B. Clafin: P-type doping and devices based on ZnO. Phys. Status Solidi B 241, 624 2004
H. Dae-Kue, K. Hyun-Sik, L. Jae-Hong, O. Jin-Yong, Y. Jin-Ho, P. Seong-Ju, K. Kyoung-Kook, D.C. Look Y.S. Park: Study of the photoluminescence of phosphorus-doped p-type ZnO thin films grown by radio-frequency magnetron sputtering. Appl. Phys. Lett. 86, 151917 2005
R. Schmidt, B. Rheinlander, M. Schubert, D. Spemann, T. Butz, J. Lenzner, E.M. Kaidashev, M. Lorenz, A. Rahm, H.C. Semmelhack M. Grundmann: Dielectric functions (1 to 5 eV) of wurtzite MgxZn1−xO (x 0.29) thin films. Appl. Phys. Lett. 82, 2260 2003
J. Gutowski, N. Presser I. Broser: Acceptor-exciton complexes in ZnO: A comprehensive analysis of their electronic states by high-resolution magnetooptics and excitation spectroscopy. Phys. Rev. B 38, 9746 1988
S.J. Jiao, Y.M. Lu, D.Z. Shen, Z.Z. Zhang, B.H. Li, Zh.H. Zheng, B. Yao, J.Y. Zhang, D.X. Zhao X.W. Fan: Donor–acceptor pair luminescence of nitrogen doping p-type ZnO by plasma-assisted molecular-beam epitaxy. J. Lumin.122–123, 368 2007
This work is supported by the Key Project of National Natural Science Foundation of China under Grant Nos. 60336020 and 50532050, the “973” program under Grant No. 2006CB604906, the Innovation Project of Chinese Academy of Sciences, the National Natural Science Foundation of China under Grant Nos. 60429403, 60506014, 50402016, 10674133, 10647105, and 60676059.
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Wei, Z.P., Yao, B., Wang, X.H. et al. Photoluminescence and acceptor level state of p-type nitrogen-doped MgZnO films. Journal of Materials Research 22, 2791–2795 (2007). https://doi.org/10.1557/JMR.2007.0349