Electrical and microstructural characteristics of ZnO–Bi2O3-based varistors doped with rare-earth oxides

Journal of Materials Research volume 16, pages2817–2823(2001)Cite this article

Abstract

ZnO-based varistor samples with a relatively high Sb2O3 to Bi2O3 ratio of 5 were fired at 1200 °C and found to have a high threshold voltage (VT) of 280 V/mm and a low energy-absorption capacity of 50 J/cm3. The introduction of rare-earth oxides (REO) increased the energy-absorption capacity of Pr6O11- and Nd2O3-doped samples to 110 J/cm3 while their threshold voltage (VT) remained slightly above 300 V/mm. Doping with Pr6O11 and Nd2O3 altered the formation of the spinel phase and significantly changed its particle size and distribution which, as a result, had a positive effect on the energy-absorption capacity of the REO-doped samples. Doping with small amounts of Pr6O11 and Nd2O3 appears to be promising for the preparation of ZnO-based varistors with a high breakdown voltage and a high energy absorption capacity.

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Affiliations

  1. Institute of Physics, National Center for Natural Science And Technology of Vietnam, 46 Nguyen Van Ngoc Street, Hanoi, Vietnam, USA

    Nguyen The Hung

  2. Institute of Science Materials, National Center for Natural Science And Technology of Vietnam, 28 Hoang Quoc Viet Street, Hanoi, Vietnam, USA

    Nguyen Dinh Quang

  3. “JoŠ;ef Stefan” Institute, Jamova 39, 1000 Ljubljana, Slovenia, USA

    Slavko Bernik

Authors
  1. Nguyen The Hung
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  2. Nguyen Dinh Quang
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  3. Slavko Bernik
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Correspondence to Slavko Bernik.

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Hung, N.T., Quang, N.D. & Bernik, S. Electrical and microstructural characteristics of ZnO–Bi2O3-based varistors doped with rare-earth oxides. Journal of Materials Research 16, 2817–2823 (2001). https://doi.org/10.1557/JMR.2001.0388

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