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Precursor scavenging of the resistive grain-boundary phase in 8 mol% yttria-stabilized zirconia: Effect of trace concentrations of SiO2

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Abstract

The influence that trace concentrations of SiO2 have on improving grain-boundary conduction via precursor scavenging using additional heat treatment at 1200 °C for 40 h before sintering was investigated. At a SiO2-impurity level (SIL) ≤160 ppm by weight, the grain-boundary resistivity (ρgb) decreased to 20% of its value, while no improvement in grain-boundary conduction was found at a SIL ≥ 310 ppm. The correlation between the resistance per unit grain-boundary area, rgb, and average grain size indicated that the inhomogeneous distribution of the siliceous phase in the sample with a SIL ≥ 310 ppm hampered the scavenging reaction.

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Authors and Affiliations

  1. National Institute for Research in Inorganic Materials, Namiki 1-1, 305-0044, Tsukuba, Ibaraki, Japan

    Jong-Heun Lee, Toshiyuki Mori, Ji-Guang Li & Takayasu Ikegami

  2. Centre for Microscopy and Microanalysis, The University of Queensland, St Lucia, 4072, Brisbane, Qld, Australia

    John Drennan

  3. Center for Microstructure Science of Materials, School of Materials Science and Engineering, Seoul National University, 151-742, Seoul, South Korea

    Jong-Heun Lee & Doh-Yeon Kim

Authors
  1. Jong-Heun Lee
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  2. Toshiyuki Mori
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  3. Ji-Guang Li
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  4. Takayasu Ikegami
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  5. John Drennan
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  6. Doh-Yeon Kim
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Correspondence to Jong-Heun Lee.

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Lee, JH., Mori, T., Li, JG. et al. Precursor scavenging of the resistive grain-boundary phase in 8 mol% yttria-stabilized zirconia: Effect of trace concentrations of SiO2. Journal of Materials Research 16, 2377–2383 (2001). https://doi.org/10.1557/JMR.2001.0326

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  • DOI: https://doi.org/10.1557/JMR.2001.0326

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