Crystallization kinetics of sputter-deposited LaNiO3 thin films on Si substrate

Abstract

The kinetics of in situ crystallization of LaNiO3 thin films in sputtering deposition at temperatures ranging from 250 to 450 °C and isothermal crystallization of room-temperature (RT) sputtered LaNiO3 thin films in annealing at 350–500 °C were investigated by the x-ray diffraction method. The crystallization in both cases basically followed the Johnson–Mehl–Avrami (JMA) relation. However, different crystallization kinetics were observed. The transformation index and activation energy of crystallization in high temperature sputtering were about 1.5 and 33 kJ/mole, respectively, while in the annealing of RT-sputtered films, 1.0 and 63 kJ/mole were found. From the determined transformation index, it is suggested that the crystallization rate in high temperature sputtering was determined by a diffusion-controlled process of lateral growth with a decreasing nucleation rate of crystallites in the adsorption layer. However, the annealed films crystallized by an interface-controlled and one-dimensional growth of existing nuclei.

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Lee, HY., Wu, TB. Crystallization kinetics of sputter-deposited LaNiO3 thin films on Si substrate. Journal of Materials Research 13, 2291–2296 (1998). https://doi.org/10.1557/JMR.1998.0319

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