Precipitates in GaN epilayers grown on sapphire substrates

Journal of Materials Research volume 13, pages2100–2104(1998)Cite this article

Abstract

Precipitates in GaN epilayers grown on sapphire substrates were investigated by atomic number contrast (ANC), wavelength-dispersive x-ray spectrometry (WDS), energy-dispersive spectrometry (EDS), and cathodoluminescence (CL) techniques. The results showed that the precipitates are mainly composed of gallium and oxygen elements and distribute more sparsely and inhomogeneously in directions in the sample grown on substrate nitridated for a longer period. Yellow luminescence intensity was imaged to be stronger in the precipitates. The results suggest that the precipitates are formed on dislocations and grain boundaries by substituting oxygen onto the nitrogen site, and result in the formations of deep levels nearby.

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Affiliations

  1. Department of Physics, Gakushuin University, Mejiro, 171, Tokyo, Japan

    Junyong Kang

  2. Department of Physics, Gakushuin University, Mejiro, 171, Tokyo, Japan

    Tomoya Ogawa

  3. Department of Physics, Xiamen University, 361005, Xiamen, People’s Republic of China

    Junyong Kang

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  1. Junyong Kang
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  2. Tomoya Ogawa
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Correspondence to Junyong Kang.

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Kang, J., Ogawa, T. Precipitates in GaN epilayers grown on sapphire substrates. Journal of Materials Research 13, 2100–2104 (1998). https://doi.org/10.1557/JMR.1998.0293

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