Characterization of polycrystalline silicon carbide films grown by atmospheric pressure chemical vapor deposition on polycrystalline silicon

Journal of Materials Research volume 13, pages406–412(1998)Cite this article

Abstract

X-ray diffraction, transmission electron microscopy, and Rutherford backscattering spectroscopy were used to characterize the microstructure of polycrystalline SiC films grown on as-deposited and annealed polysilicon substrates. For both substrate types, the texture of the SiC films resembles the polysilicon at the onset of SiC growth. During the high temperature deposition process, the as-deposited polysilicon recrystallizes without influencing the crystallinity of the overlying SiC. An investigation of the SiC/polysilicon interface reveals that a heteroepitaxial relationship exists between polysilicon and SiC grains. From this study, a method to control the orientation of highly textured polycrystalline SiC films has been developed.

This is a preview of subscription content, access via your institution.

Access options

Buy single article

Instant access to the full article PDF.

US$ 39.95

Tax calculation will be finalised during checkout.

References

  1. 1.

    M. Mehregany, IEEE Circuits Dev. 9, 14 (1993).

    Article  Google Scholar 

  2. 2.

    G. L. Pearson, W. T. Read, Jr., and W. L. Feldman, Acta Metall. 5, 181 (1957).

    CAS  Article  Google Scholar 

  3. 3.

    G. Krotz, W. Legner, Ch. Wagner, H. Moller, H. Sonntag, and G. Muller, Proc. 8th Int. Conf. Solid-State Sensors and Actuators, and Eurosensors IX, Stockholm, Sweden (1995), pp. 186–188.

    Google Scholar 

  4. 4.

    J. A. Powell, L. G. Matus, and M. A. Kuczmarski, J. Electrochem. Soc. 134, 1558 (1987).

    CAS  Article  Google Scholar 

  5. 5.

    A. J. Steckl and J. P. Li, IEEE Trans. Electron. Dev. 39, 64 (1992).

    CAS  Article  Google Scholar 

  6. 6.

    Y. Hattori, T. Suzuki, T. Murata, T. Yabumi, K. Yasuda, and M. Saji, J. Cryst. Growth 115, 607 (1991).

    CAS  Article  Google Scholar 

  7. 7.

    L. Tong, M. Mehregany, and L. G. Matus, Appl. Phys. Lett. 60, 2992 (1992).

    CAS  Article  Google Scholar 

  8. 8.

    N. Rajan, C. Zorman, M. Mehregany, R. DeAnna, and R. Harvey, in Proc. 10th Int. Workshop on Microelectromechanical Systems (Nagoya, Japan, 1997), pp. 165–168.

    Google Scholar 

  9. 9.

    K. Kamimura, K. Koike, H. Ono, T. Homma, Y. Onuma, and S. Yonekubo, in Amorphous and Crystalline Silicon Carbide IV, edited by C. Y. Yang, M. M. Rahman, and G. L. Harris (Springer Proc. in Physics, Berlin, 1992), Vol. 71, pp. 259–265.

    Google Scholar 

  10. 10.

    J. Kobayashi, S. Yonekubo, K. Kamimura, and Y. Onuma, in Proc. Int. Conf. on Silicon Carbide and Related Materials, edited by S. Nakashima, H. Matsunami, S. Yoshida, and H. Harima (IOP Publishing Ltd., Bristol, U. K., 1995), pp. 229–232.

    Google Scholar 

  11. 11.

    Y. Onuma, S. Miyashita, Y. Nishibe, K. Kamimura, and K. Tezuka, in Amorphous and Crystalline Silicon Carbide II, edited by M. M. Rahman, C. Y. Yang, and G. L. Harris (Springer Proc. in Physics, Berlin, 1989), Vol. 43, pp. 212–216.

    Google Scholar 

  12. 12.

    S. Nishino and J. Saraie, in Amorphous and Crystalline Silicon Carbide II, edited by M. M. Rahman, C. Y. Yang, and G. L. Harris (Springer Proc. in Physics, Berlin, 1989), Vol. 43, pp. 8–13.

    Google Scholar 

  13. 13.

    H. Nagasawa and Y. Yamaguchi, Thin Solid Films 225, 230 (1993).

    CAS  Article  Google Scholar 

  14. 14.

    T. Kamins, Metall. Trans. of AIME 2, 2292–2294 (1971).

    CAS  Google Scholar 

  15. 15.

    L. Wei, M. Vaudin, C. S. Hwang, G. White, J. Xu, and A. J. Steckl, J. Mater. Res. 10, 1889 (1995).

    Article  Google Scholar 

  16. 16.

    J. Adamczewska and T. Budzynski, Thin Solid Films 113, 271 (1984).

    CAS  Article  Google Scholar 

  17. 17.

    T. Kamins, in Polycrystalline Silicon for Integrated Circuit Applications (Kluwer Academic Publishers, Boston, MA, 1988), p. 61.

    Google Scholar 

  18. 18.

    A. J. Fleischman, S. Roy, C. A. Zorman, and M. Mehregany, in Proc. 9th Int. Workshop on Microelectromechanical Systems (San Diego, CA, 1996), pp. 234–238.

  19. 19.

    S. Wolf and R. N. Tauber, in Silicon Processing for the VLSI Era, Vol. 1—Process Technology (Lattice Press, Sunset Beach, CA, 1986), pp. 198–241.

    Google Scholar 

  20. 20.

    C. A. Zorman, A. J. Fleischman, A. S. Dewa, M. Mehregany, C. Jacob, S. Nishino, and P. Pirouz, J. Appl. Phys. 78, 5136 (1995).

    CAS  Article  Google Scholar 

  21. 21.

    N. Becourt, J. L. Ponthenier, A. M. Papon, and C. Joussand, Physica B 185, 79 (1993).

    CAS  Article  Google Scholar 

  22. 22.

    H. Kakinuma, J. Vac. Sci. Technol. A 13, 2310 (1995).

    CAS  Article  Google Scholar 

Download references

Author information

Affiliations

  1. Department of Electrical Engineering and Applied Physics, Case Western Reserve University, Cleveland, Ohio, 44106, USA

    Christian A. Zorman, Shuvo Roy, Aaron J. Fleischman & Mehran Mehregany

  2. Department of Materials Science and Engineering, Case Western Reserve University, Cleveland, Ohio, 44106, USA

    Chien-Hung Wu

Authors
  1. Christian A. Zorman
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. Shuvo Roy
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. Chien-Hung Wu
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. Aaron J. Fleischman
    View author publications

    You can also search for this author in PubMed Google Scholar

  5. Mehran Mehregany
    View author publications

    You can also search for this author in PubMed Google Scholar

Rights and permissions

Reprints and Permissions

About this article

Cite this article

Zorman, C.A., Roy, S., Wu, CH. et al. Characterization of polycrystalline silicon carbide films grown by atmospheric pressure chemical vapor deposition on polycrystalline silicon. Journal of Materials Research 13, 406–412 (1998). https://doi.org/10.1557/JMR.1998.0053

Download citation