On the formation of solid state crystallized intrinsic polycrystalline germanium thin films

Abstract

A two-step heat treatment process has been employed to crystallize low pressure deposited thin films of amorphous germanium. Large grain p-type polycrystalline germanium with a Hall effect hole mobility of greater than 300 cm2/Vs has been obtained. Films with near intrinsic conductivity, necessary for the construction of practical enhancement-mode insulated-gate thin film transistors, were obtained by introducing phosphorus as a compensating dopant. High Hall effect electron mobility of 245 cm2/Vs has been measured on the resulting n-type polycrystalline germanium thin films.

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Meng, Z., Jin, Z., Bhat, G.A. et al. On the formation of solid state crystallized intrinsic polycrystalline germanium thin films. Journal of Materials Research 12, 2548–2551 (1997). https://doi.org/10.1557/JMR.1997.0338

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