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On the formation of solid state crystallized intrinsic polycrystalline germanium thin films

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Abstract

A two-step heat treatment process has been employed to crystallize low pressure deposited thin films of amorphous germanium. Large grain p-type polycrystalline germanium with a Hall effect hole mobility of greater than 300 cm2/Vs has been obtained. Films with near intrinsic conductivity, necessary for the construction of practical enhancement-mode insulated-gate thin film transistors, were obtained by introducing phosphorus as a compensating dopant. High Hall effect electron mobility of 245 cm2/Vs has been measured on the resulting n-type polycrystalline germanium thin films.

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Authors and Affiliations

  1. Department of Electrical and Electronic Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong

    Zhiguo Meng, Zhonghe Jin, Gururaj A. Bhat, Hoi S. Kwok & Man Wong

  2. Department of Physics and Materials Science, City University of Hong Kong, Kowloon, Hong Kong

    Paul Chu

Authors
  1. Zhiguo Meng
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  2. Zhonghe Jin
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  3. Gururaj A. Bhat
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  4. Paul Chu
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  5. Hoi S. Kwok
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  6. Man Wong
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Meng, Z., Jin, Z., Bhat, G.A. et al. On the formation of solid state crystallized intrinsic polycrystalline germanium thin films. Journal of Materials Research 12, 2548–2551 (1997). https://doi.org/10.1557/JMR.1997.0338

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  • DOI: https://doi.org/10.1557/JMR.1997.0338

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