Electrical and structural properties of SrTiO3 thin films deposited by plasma-enhanced metalorganic chemical vapor deposition

Journal of Materials Research volume 12, pages1160–1164(1997)Cite this article

Abstract

The microstructure and electrical properties were investigated for SrTiO3(STO) thin films deposited on Pt/Ti/SiO2/Si substrates by PEMOCVD. The SrF2 phase existing in the STO films deposited at 450 °C influences the dielectric constant, dissipation factor, and leakage current density of STO films. The dielectric constant and dissipation factor of STO films deposited at 500 °C were 210 and 0.018 at 100 kHz, respectively. STO films were found to have paraelectric properties from the capacitance-voltage characteristics. Leakage current density of STO films at 500 °C was about 1.0 × 10−8 A/cm2 at an electric field of 70 kV/cm. The leakage current behaviors of STO films deposited at 500 and 550 °C were controlled by Schottky emission with applied electric field.

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Affiliations

  1. Department of Material Engineering, College of Engineering, Chungnam National University, 305-764, Daeduk Science Town, Taejon, Korea

    Nam-Kyeong Kim & Soon-Gil Yoon

  2. Department of Ceramic Science & Engineering, Korea Advanced Institute of Science and Technology, Taejon, Korea

    Won-Jae Lee & Ho-Gi Kim

Authors
  1. Nam-Kyeong Kim
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  2. Soon-Gil Yoon
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  3. Won-Jae Lee
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  4. Ho-Gi Kim
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Correspondence to Nam-Kyeong Kim.

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Kim, NK., Yoon, SG., Lee, WJ. et al. Electrical and structural properties of SrTiO3 thin films deposited by plasma-enhanced metalorganic chemical vapor deposition. Journal of Materials Research 12, 1160–1164 (1997). https://doi.org/10.1557/JMR.1997.0160

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